SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 211-216

Investigation and modeling of fluorine co-implantation effects on dopant redistribution

(6) Diebel, M a,b Chakravarthi, S b Dunham, S T c Machala, C F b Ekbote, S b Jain, A b

a UNIVERSITY OF WASHINGTON (United States)

b TEXAS INSTRUMENTS (United States)

c University of Washington (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ATOMS; BINDING ENERGY; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; FLUORINE; INTERFACES (MATERIALS); PHOSPHORUS; POINT DEFECTS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

AMORPHOUS-CRYSTALLINE INTERFACE; DOPANT; TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 0242409648 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-765-d6.15 Document Type: Conference Paper

Times cited : (23)

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