SCOPUS 정보 검색 플랫폼

Volumn 154-155, Issue 1-3, 2008, Pages 211-215

Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing

(7) Martinez Limia, A a Pichler, P a,b Lerch, W c Paul, S c Kheyrandish, H d Pakfar, A e Tavernier, C e

a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c MATTSON THERMAL PRODUCTS GMBH (United States)

d CSMA MATS (United Kingdom)

e STMICROELECTRONICS (France)

Author keywords

Arsenic activation; Flash annealing; Process simulation; Silicon; Solid phase epitaxial regrowth; Spike annealing

Indexed keywords

ANNEALING; ARSENIC; CHEMICAL ACTIVATION; DOPING (ADDITIVES); THERMODYNAMIC STABILITY;

ANNEALING EXPERIMENTS; ARSENIC ACTIVATION; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL SIMULATIONS; FLASH ANNEALING; IMPLANTATION ENERGIES; PROCESS SIMULATIONS; SOLID PHASE EPITAXIAL REGROWTH; SPIKE ANNEALING; THERMAL PROCESS;

SILICON;

EID: 56949096222 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2008.09.045 Document Type: Article

Times cited : (6)

References (7)

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- (2007) 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors RTP 2006 , pp. 191-196
- Lerch, W.¹ Paul, S.² Niess, J.³ McCoy, S.⁴ Gelpey, J.⁵ Bolze, D.⁶ Cristiano, F.⁷ Severac, F.⁸ Fazzini, P.F.⁹ Martinez, A.¹⁰ Pichler, P.¹¹

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- Masetti G., Severi M., and Solmi S. IEEE Trans. Electron Devices ED-30 (1983) 764
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