Simulation of dopant diffusion and activation during flash lamp annealing

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 20-23

  Zechner, Christoph ^a   Matveev, Dmitri ^a   Zographos, Nikolas ^a   Lerch, Wilfried ^b   Paul, Silke ^b  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Activation; Diffusion; FLA; Simulation

Indexed keywords

DIFFUSION; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY;

ADVANCED MODELING; DOPANT ACTIVATION; DOPANT-DIFFUSION; FLASH LAMP ANNEALING; JUNCTION FORMATION; PEAK TEMPERATURES; SENTAURUS PROCESS; SIMULATION; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

CHEMICAL ACTIVATION;

EID: 56949091452     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.005     Document Type: Article

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