Determination of the composition of InxGa1-xN from strain measurements

Acta Materialia

Volumn 57, Issue 19, 2009, Pages 5681-5692

  Morales, F M ^a   Gonzalez D ^a   Lozano, J G ^a   Garcia R ^a   Hauguth Frank, S ^b   Lebedev, V ^c   Cimalla, V ^c   Ambacher, O ^c  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Compound semiconductors (InGaN); Elastic behavior; Thin films; Transmission electron microscopy (TEM); X ray diffraction (XRD)

Indexed keywords

ANISOTROPIC ELASTIC CONSTANTS; CELL PARAMETER; COMPOUND SEMICONDUCTORS (INGAN); ELASTIC BEHAVIOR; ELASTIC COEFFICIENT; GENERAL EQUATIONS; HIGH RESOLUTION X RAY DIFFRACTION; SCANNING TRANSMISSION ELECTRON MICROSCOPES; STRUCTURAL PARAMETER; VEGARD'S LAW; WURTZITES; X-RAY DIFFRACTION (XRD);

CELL MEMBRANES; CHEMICAL ANALYSIS; DIFFRACTION; ELASTIC CONSTANTS; ELECTRON MICROSCOPES; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM; STRAIN GAGES; STRAIN MEASUREMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

X RAY DIFFRACTION ANALYSIS;

EID: 70349981175     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.07.063     Document Type: Article

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