-
2
-
-
0000002580
-
Fundamental energy gap of GaN from photoluminescence excitation spectra
-
Fundamental energy gap of GaN from photoluminescence excitation spectra. Phys Rev B 10 2 (1974) 676-681
-
(1974)
Phys Rev B
, vol.10
, Issue.2
, pp. 676-681
-
-
-
3
-
-
0000815007
-
GaN, AlN and InN: a review
-
Strite S., and Morkoc H. GaN, AlN and InN: a review. J Vac Sci Technol B 10 (1992) 1237-1266
-
(1992)
J Vac Sci Technol B
, vol.10
, pp. 1237-1266
-
-
Strite, S.1
Morkoc, H.2
-
5
-
-
84989993015
-
Energy band structure of aluminum nitride
-
Hejda B., and Hauptmanova K. Energy band structure of aluminum nitride. Phys Status Solidi 36 (1969) K95-K99
-
(1969)
Phys Status Solidi
, vol.36
-
-
Hejda, B.1
Hauptmanova, K.2
-
6
-
-
0015400068
-
The electronic band structures of the wide band gap semiconductors GaN and AlN
-
Jones D., and Lettington A.H. The electronic band structures of the wide band gap semiconductors GaN and AlN. Solid State Commun 11 (1972) 701-705
-
(1972)
Solid State Commun
, vol.11
, pp. 701-705
-
-
Jones, D.1
Lettington, A.H.2
-
7
-
-
0008983753
-
Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO
-
Kobayashi A., Sankey O.F., Volz S.M., and Dow J.D. Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO. Phys Rev B 28 (1983) 935-945
-
(1983)
Phys Rev B
, vol.28
, pp. 935-945
-
-
Kobayashi, A.1
Sankey, O.F.2
Volz, S.M.3
Dow, J.D.4
-
8
-
-
0021873761
-
A minimal basis semi-ab initio approach to the band structures of semiconductors
-
Huang M.-Z., and Ching W.-Y. A minimal basis semi-ab initio approach to the band structures of semiconductors. J Phys Chem Solids 46 (1985) 977-995
-
(1985)
J Phys Chem Solids
, vol.46
, pp. 977-995
-
-
Huang, M.-Z.1
Ching, W.-Y.2
-
9
-
-
0000487417
-
Electron structure of AlN
-
Ching W.-Y., and Harmon B.N. Electron structure of AlN. Phys Rev B 34 (1986) 5305-5308
-
(1986)
Phys Rev B
, vol.34
, pp. 5305-5308
-
-
Ching, W.-Y.1
Harmon, B.N.2
-
10
-
-
0042003454
-
Electronic structure of Cu overlayers on AlN
-
Kasowski R.V., and Ohuchi F.S. Electronic structure of Cu overlayers on AlN. Phys Rev B 35 (1987) 9311
-
(1987)
Phys Rev B
, vol.35
, pp. 9311
-
-
Kasowski, R.V.1
Ohuchi, F.S.2
-
11
-
-
24844436062
-
Electronic, optical, and structural properties of some wurtzite crystals
-
Xu Y.-N., and Ching W.-Y. Electronic, optical, and structural properties of some wurtzite crystals. Phys Rev B 48 (1993) 4335-4351
-
(1993)
Phys Rev B
, vol.48
, pp. 4335-4351
-
-
Xu, Y.-N.1
Ching, W.-Y.2
-
12
-
-
35949004800
-
Electronic structure and properties of AlN
-
Ruin E., Alvarez S., and Alimony P. Electronic structure and properties of AlN. Phys Rev B 49 (1994) 7115-7123
-
(1994)
Phys Rev B
, vol.49
, pp. 7115-7123
-
-
Ruin, E.1
Alvarez, S.2
Alimony, P.3
-
15
-
-
0031554187
-
Optical super lattices - a strategy for designing phase-shift masks for photolithography at 248 and 193 nm: application to Aln/Crn
-
Carcia P.F., French R.H., Reilly M.H., Lemon M.F., and Jones D.J. Optical super lattices - a strategy for designing phase-shift masks for photolithography at 248 and 193 nm: application to Aln/Crn. Appl Phys Lett 70 (1997) 2371-2373
-
(1997)
Appl Phys Lett
, vol.70
, pp. 2371-2373
-
-
Carcia, P.F.1
French, R.H.2
Reilly, M.H.3
Lemon, M.F.4
Jones, D.J.5
-
16
-
-
28044451190
-
-
Carcia P.F., French R.H., Sharp K., Meth J.S., and Smith B.W. Proc. SPIE-Int. Soc. Opt. Eng. 2884 (1996) 255
-
(1996)
Proc. SPIE-Int. Soc. Opt. Eng.
, vol.2884
, pp. 255
-
-
Carcia, P.F.1
French, R.H.2
Sharp, K.3
Meth, J.S.4
Smith, B.W.5
-
18
-
-
0008034608
-
Optical absorption and cathodoluminescence if epitaxial aluminum nitrides films
-
Morita M., Tsubouchi K., and Mikoshiba N. Optical absorption and cathodoluminescence if epitaxial aluminum nitrides films. Jpn J Appl Phys 21 (1982) 1102-1103
-
(1982)
Jpn J Appl Phys
, vol.21
, pp. 1102-1103
-
-
Morita, M.1
Tsubouchi, K.2
Mikoshiba, N.3
-
19
-
-
0001003336
-
Properties of AlN films grown at 350 K by gas-phase excimer laser photolysis
-
Radhakrishanan G. Properties of AlN films grown at 350 K by gas-phase excimer laser photolysis. J Appl Phys 78 (1995) 6000-6005
-
(1995)
J Appl Phys
, vol.78
, pp. 6000-6005
-
-
Radhakrishanan, G.1
-
20
-
-
0018430639
-
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
-
Yamashita H., Fukui K., Misawa S., and Yoshida S. Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region. J Appl Phys 50 (1979) 896-902
-
(1979)
J Appl Phys
, vol.50
, pp. 896-902
-
-
Yamashita, H.1
Fukui, K.2
Misawa, S.3
Yoshida, S.4
-
22
-
-
0040765369
-
Fundamental optical absorption edge of reactively direct current magnetron sputter-deposited AlN thin films
-
Zarwasch R., Rille E., and Pulker H.H. Fundamental optical absorption edge of reactively direct current magnetron sputter-deposited AlN thin films. J Appl Phys 71 (1992) 5275-5277
-
(1992)
J Appl Phys
, vol.71
, pp. 5275-5277
-
-
Zarwasch, R.1
Rille, E.2
Pulker, H.H.3
-
23
-
-
84972034289
-
Effect of trace carbon on the uv-induced behaviour of aluminum nitride ceramics
-
Kaplan J.C., and Gerhardt R.A. Effect of trace carbon on the uv-induced behaviour of aluminum nitride ceramics. J Mater Res 9 (1994) 2209
-
(1994)
J Mater Res
, vol.9
, pp. 2209
-
-
Kaplan, J.C.1
Gerhardt, R.A.2
-
24
-
-
0028423117
-
Temperature dependent of band gap change in InN AND AlN
-
Guo Q., and Yoshida A. Temperature dependent of band gap change in InN AND AlN. J Appl Phys 33 (1994) 2453-2456
-
(1994)
J Appl Phys
, vol.33
, pp. 2453-2456
-
-
Guo, Q.1
Yoshida, A.2
-
25
-
-
36449009360
-
Electronic structure of AlN: theory and experiment
-
Loughin S., French R.H., Ching W.-Y., Xu Y.-N., and Slack G.A. Electronic structure of AlN: theory and experiment. J Appl Phys Lett 63 (1993) 1182
-
(1993)
J Appl Phys Lett
, vol.63
, pp. 1182
-
-
Loughin, S.1
French, R.H.2
Ching, W.-Y.3
Xu, Y.-N.4
Slack, G.A.5
-
26
-
-
36549101542
-
Electronic structure of an Aln film produced by ion implantation, studied by electron spectroscopy
-
Gautier M., Duraud J.P., and Legressus C. Electronic structure of an Aln film produced by ion implantation, studied by electron spectroscopy. J Appl Phys 61 (1987) 574-580
-
(1987)
J Appl Phys
, vol.61
, pp. 574-580
-
-
Gautier, M.1
Duraud, J.P.2
Legressus, C.3
-
27
-
-
0022146069
-
Photoelectron and electron energy loss spectra of epitaxial aluminum nitride
-
Olson C.G., Sexton J.H., Lynch D.W., Bevalo A.J., Shanks H.R., Harmon B.N., et al. Photoelectron and electron energy loss spectra of epitaxial aluminum nitride. Solid State Commun 56 (1985) 35
-
(1985)
Solid State Commun
, vol.56
, pp. 35
-
-
Olson, C.G.1
Sexton, J.H.2
Lynch, D.W.3
Bevalo, A.J.4
Shanks, H.R.5
Harmon, B.N.6
-
28
-
-
0000527362
-
Electron transport in wurtzite indium nitride
-
O'Leary S.K., Foutz B.E., Shur M.S., Bhapkar U.V., and Eastman L.F. Electron transport in wurtzite indium nitride. J Appl Phys 83 2 (1998) 826-829
-
(1998)
J Appl Phys
, vol.83
, Issue.2
, pp. 826-829
-
-
O'Leary, S.K.1
Foutz, B.E.2
Shur, M.S.3
Bhapkar, U.V.4
Eastman, L.F.5
-
29
-
-
0032021203
-
Thermal properties of indium nitride
-
Krukowski S., Witek A., Adamczyk J., Jun J., Bockowski M., Grzegory I., et al. Thermal properties of indium nitride. J Phys Chem Solids 59 (1998) 289-295
-
(1998)
J Phys Chem Solids
, vol.59
, pp. 289-295
-
-
Krukowski, S.1
Witek, A.2
Adamczyk, J.3
Jun, J.4
Bockowski, M.5
Grzegory, I.6
-
30
-
-
0001069491
-
Ensemble Monte Carlo study of electron transport in wurtzite InN
-
Bellotti E., Doshi B.K., Brennam K.F., Albrecht J.D., and Ruden P.P. Ensemble Monte Carlo study of electron transport in wurtzite InN. J Appl Phys 85 2 (1999) 916-923
-
(1999)
J Appl Phys
, vol.85
, Issue.2
, pp. 916-923
-
-
Bellotti, E.1
Doshi, B.K.2
Brennam, K.F.3
Albrecht, J.D.4
Ruden, P.P.5
-
31
-
-
0000400597
-
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN and InN
-
Kim K., Lambrecht W.R.L., and Segall B. Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN and InN. Phys Rev B 53 (1996) 16310-16326
-
(1996)
Phys Rev B
, vol.53
, pp. 16310-16326
-
-
Kim, K.1
Lambrecht, W.R.L.2
Segall, B.3
-
32
-
-
24144491133
-
Propagation of ultrasonics waves in bulk gallium nitride (GaN) senoconductor in the presence of high-frequency electric field
-
Mensah S.Y., Menash N.G., Elloh V.W., Banini G.K., Sam F., and Allotey F.K.A. Propagation of ultrasonics waves in bulk gallium nitride (GaN) senoconductor in the presence of high-frequency electric field. Phys E-Low-Dimensional Systems Nanostruct 28 4 (2005) 500-506
-
(2005)
Phys E-Low-Dimensional Systems Nanostruct
, vol.28
, Issue.4
, pp. 500-506
-
-
Mensah, S.Y.1
Menash, N.G.2
Elloh, V.W.3
Banini, G.K.4
Sam, F.5
Allotey, F.K.A.6
-
33
-
-
23944474538
-
Elastic waves at the (0 0 1) and (1 1 0) surfaces of AlN, Gan and InN
-
Aynaou H., Velasco V.R., Nougaoui E.L., Boudouti E.H., Bria D., and Djafari-Rouhani B. Elastic waves at the (0 0 1) and (1 1 0) surfaces of AlN, Gan and InN. Surf Sci 590 (2005) 224-242
-
(2005)
Surf Sci
, vol.590
, pp. 224-242
-
-
Aynaou, H.1
Velasco, V.R.2
Nougaoui, E.L.3
Boudouti, E.H.4
Bria, D.5
Djafari-Rouhani, B.6
-
34
-
-
0041628046
-
Amplification of ultrasonic waves in bulk GaN and GaAlN/GaN hetrostructures
-
Abdelraheem S.K., Blyth D.P., and Balkan N. Amplification of ultrasonic waves in bulk GaN and GaAlN/GaN hetrostructures. Phys Status Solidi A - Appl Res 185 2 (2001) 247-256
-
(2001)
Phys Status Solidi A - Appl Res
, vol.185
, Issue.2
, pp. 247-256
-
-
Abdelraheem, S.K.1
Blyth, D.P.2
Balkan, N.3
-
35
-
-
0018035490
-
Calculation of third-fourth-order elastic constants of alkali halide crystal
-
Mori S., and Hiki Y. Calculation of third-fourth-order elastic constants of alkali halide crystal. J Phys Soc Jpn 45 5 (1978) 1449-1456
-
(1978)
J Phys Soc Jpn
, vol.45
, Issue.5
, pp. 1449-1456
-
-
Mori, S.1
Hiki, Y.2
-
36
-
-
0002428832
-
The elastic constants of zinc between 4.2° and 670 °K
-
Alers G.A., and Neighbours J.R. The elastic constants of zinc between 4.2° and 670 °K. J Phys Chem Solids 7 (1958) 58-64
-
(1958)
J Phys Chem Solids
, vol.7
, pp. 58-64
-
-
Alers, G.A.1
Neighbours, J.R.2
-
37
-
-
2842606598
-
Low temperature elasticity and magneto-elasticity of dysprosium single crystal
-
Rosen M., and Klimker H. Low temperature elasticity and magneto-elasticity of dysprosium single crystal. Phys Rev B 1 9 (1970) 3748-3756
-
(1970)
Phys Rev B
, vol.1
, Issue.9
, pp. 3748-3756
-
-
Rosen, M.1
Klimker, H.2
-
38
-
-
0014469983
-
Thermal and electronic attenuation and dislocation drag in hexagonal crystal cadmium
-
Mason W.P., and Rosenberg A. Thermal and electronic attenuation and dislocation drag in hexagonal crystal cadmium. J Acoust Soc Am 45 2 (1969) 470-475
-
(1969)
J Acoust Soc Am
, vol.45
, Issue.2
, pp. 470-475
-
-
Mason, W.P.1
Rosenberg, A.2
-
39
-
-
0142072579
-
Effect of thermal conductivity on ultrasonic attenuation in praseodymium monochalcogenides
-
Yadav R.R., and Singh D. Effect of thermal conductivity on ultrasonic attenuation in praseodymium monochalcogenides. Acoust Phys 49 5 (2003) 595-604
-
(2003)
Acoust Phys
, vol.49
, Issue.5
, pp. 595-604
-
-
Yadav, R.R.1
Singh, D.2
-
40
-
-
0020332025
-
Gruneisen number in hexagonal crystal
-
Rajagopalan S., and Nandanpawer M. Gruneisen number in hexagonal crystal. J Acoust Soc Am 71 6 (1982) 1469-1472
-
(1982)
J Acoust Soc Am
, vol.71
, Issue.6
, pp. 1469-1472
-
-
Rajagopalan, S.1
Nandanpawer, M.2
-
41
-
-
0000355853
-
Model interatomic potential for simulation in selenium
-
Oligschleger C., Jones R.O., Reimann S.M., and Schober H.R. Model interatomic potential for simulation in selenium. Phys Rev B 53 10 (1996) 6165-6173
-
(1996)
Phys Rev B
, vol.53
, Issue.10
, pp. 6165-6173
-
-
Oligschleger, C.1
Jones, R.O.2
Reimann, S.M.3
Schober, H.R.4
-
42
-
-
3242813816
-
High temperature elastic constant prediction of some group III-nitrides
-
Reeber R.R., and Wang K. High temperature elastic constant prediction of some group III-nitrides. MRS Internet J Nitride Semicond Res 6 3 (2001) 1-5
-
(2001)
MRS Internet J Nitride Semicond Res
, vol.6
, Issue.3
, pp. 1-5
-
-
Reeber, R.R.1
Wang, K.2
-
43
-
-
0001714294
-
Elastic constants of gallium nitride
-
Polian A., Grimsditch M., and Grzegery I. Elastic constants of gallium nitride. J Appl Phys 79 6 (1996) 3343-3344
-
(1996)
J Appl Phys
, vol.79
, Issue.6
, pp. 3343-3344
-
-
Polian, A.1
Grimsditch, M.2
Grzegery, I.3
-
44
-
-
13544250854
-
-
Takagi Y., Ahart M., Azuhata T., Sota T., Suzki K., and Nakamura S. Physica B 219/220 (1996) 547
-
(1996)
Physica B
, vol.219-220
, pp. 547
-
-
Takagi, Y.1
Ahart, M.2
Azuhata, T.3
Sota, T.4
Suzki, K.5
Nakamura, S.6
-
45
-
-
0029679211
-
Thermal expansion, molar volume and specific heat of diamond from 0 to 3000 K
-
Reeber R.R., and Wang K. Thermal expansion, molar volume and specific heat of diamond from 0 to 3000 K. J Electron Matter 25 (1996) 63
-
(1996)
J Electron Matter
, vol.25
, pp. 63
-
-
Reeber, R.R.1
Wang, K.2
-
47
-
-
0004353828
-
Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements
-
Sheleg A.U., and Savastenko V.A. Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements. Inorg Mat 15 (1979) 1257
-
(1979)
Inorg Mat
, vol.15
, pp. 1257
-
-
Sheleg, A.U.1
Savastenko, V.A.2
-
49
-
-
0030284096
-
Thermal expansion and lattice parameters of group IV semiconductors
-
Reeber R.R., and Wang K. Thermal expansion and lattice parameters of group IV semiconductors. Mater Chem Phys 46 (1996) 259
-
(1996)
Mater Chem Phys
, vol.46
, pp. 259
-
-
Reeber, R.R.1
Wang, K.2
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