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Journal of Physics Condensed Matter

Volumn 13, Issue 32, 2001, Pages 6977-6991

Structural analysis of InGaN epilayers

(5) O'Donnell, K P a Mosselmans, J F W b Martin, R W a Pereira, S a,c White, M E a

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b DARESBURY LABORATORY (United Kingdom)

c UNIVERSITY OF AVEIRO (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; HETEROJUNCTIONS; LATTICE CONSTANTS; LIGHT EMISSION; LIGHT EMITTING DIODES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS (EPMA); SPUTTERED ION MASS SPECTROSCOPY (SIMS);

GALLIUM NITRIDE;

EID: 0035855004 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/32/307 Document Type: Article

Times cited : (98)

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