Determination of the lattice strain and chemical composition of semiconductor heterostructures by high-resolution x-ray diffraction

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 4101-4110

  De Caro, Liberato ^a   Giannini, Cinzia ^a   Tapfer, Leander ^a  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000805006     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361773     Document Type: Article

References (24)

1. L. De Caro and L. Tapfer, Phys. Rev. B 48, 2298 (1993), and references therein.
2. W. J. Bartels and W. Nijman, J. Cryst. Growth 44, 518 (1978); J. Hornstra and W. J. Bartels, ibid. 44, 513 (1978).
3. W. J. Bartels and W. Nijman, J. Cryst. Growth 44, 518 (1978); J. Hornstra and W. J. Bartels, ibid. 44, 513 (1978).
4. Y. Kawamura and H. Okamoto, J. Appl. Phys. 50, 4457 (1979).
5. Y. P. Khapachev and F. N. Chukhovskii, Sov. Phys. Crystallogr. 34, 465 (1989).
6. A. Leiberich and J. Levkoff, J. Vac. Sci. Technol. B 8, 422 (1990).
7. M. Servidori, F. Cembali, R. Fabbri, and A. Zani, J. Appl. Crystallogr. 25, 46 (1992).
8. M. Fatemi, J. Chaudhuri, and A. Christou, J. Appl. Phys. 73, 1154 (1993).
9. Y. N. Drozdov, Crystallogr. Rep. 38, 390 (1993).
10. N. Zhu, R. Li, J. Chen, and S. Xu, J. Appl. Phys. 75, 2805 (1994).
11. C. Giannini, L. De Caro, and L. Tapfer, Solid State Commun. 91, 635 (1994).
12. 3 with respect to that made by Y. P. Khapachev and F. N. Chukhovskii. Obviously, since also the values of the off-diagonal tensor components change sign, the scalar quantity Δθ is invariant.
13. F. Cembali and M. Servidori, J. Appl. Crystallogr. 22, 345 (1989); F. Cembali, R. Fabbri, M. Servidori, A. Zani, G. Basile, G. Cavagnero, A. Bergamin, and G. Zosi, ibid. 25, 424 (1989).
14. F. Cembali and M. Servidori, J. Appl. Crystallogr. 22, 345 (1989); F. Cembali, R. Fabbri, M. Servidori, A. Zani, G. Basile, G. Cavagnero, A. Bergamin, and G. Zosi, ibid. 25, 424 (1989).
15. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, New Series III/17a, edited by O. Madelung, M. Schulz, and H. Weiss (Springer, Heidelberg, 1982).
16. S. N. G. Chu, A. T. Macrander, K. E. Strege, and W. D. Johnston, J. Appl. Phys. 57, 249 (1985).
17. J. F. Nye, Physical Properties of Crystals (Oxford University Press, Oxford, 1964), pp. 93-109, 131-149.
18. E. Anastassakis and E. Liarokapis, Phys. Status Solidi B 149, k1 (1988).
19. S. Adachi, Properties of Aluminum Gallium Arsenide (Short Run Press Ltd., Exeter, UK, 1993), pp. 17 and 18.
20. R. P. Levant and F. J. Towner, Phys. Rev. B 48, 9154 (1993).
21. M. S. Goorsky, T. F. Kuech, M. A. Tischler, and R. M. Potemski, Appl. Phys. Lett. 59, 2269 (1991).
22. B. K. Tanner, A. G. Turnbull, C. R. Stanley, A. H. Kean, and M. McElhinney, Appl. Phys. Lett. 59, 2272 (1991).
23. J. Whitaker, Solid-State Electron. 8, 649 (1965).
24. M. Ettenberg and J. Paff, J. Appl. Phys. 41, 3926 (1970).