InN excitonic deformation potentials determined experimentally

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2798-2801

  Gil, B ^a   Moret, M ^a   Briot, O ^a   Ruffenach, S ^a   Giesen, Ch ^b   Heuken, M ^b   Rushworth, S ^c   Leese, T ^c   Succi, M ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b AIXTRON AG   (Germany)

^c SAFC Hitech   (United Kingdom)

^d SAES GETTERS S P A   (Italy)

Author keywords

A1. Excitonic deformation potential; A3. MOCVD; B1. InN

Indexed keywords

A1. EXCITONIC DEFORMATION POTENTIAL; A3. MOCVD; B1. INN; DEFORMATION POTENTIAL; EXPERIMENTAL DETERMINATION; HIGH RESOLUTION; INDIUM NITRIDE; INN FILMS; INTERBAND; METAL ORGANIC; OPTICAL SPECTROSCOPY; VAPOUR-PHASE; X RAY MEASUREMENTS;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM NITRIDE; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

DEFORMATION;

EID: 65949119767     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.010     Document Type: Article

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