Electronic and photoconductive properties of ultrathin InGaN photodetectors

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Lebedev, V ^a   Polyakov, V M ^a   Hauguth Frank, S ^a   Cimalla, V ^a   Wang, C Y ^a   Ecke, G ^a   Schwierz, F ^a   Schober, A ^a   Lozano, J G ^b   Morales, F M ^b   Gonzalez D ^b   Ambacher, O ^c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CÁDIZ   (Spain)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; PHOTOCONDUCTIVITY; POISSON EQUATION; SEMICONDUCTING INDIUM COMPOUNDS; ULTRATHIN FILMS;

INTERFACE ROUGHNESS; METAL SEMICONDUCTOR METAL PHOTODETECTORS; SURFACE ELECTRON ACCUMULATION;

PHOTODETECTORS;

EID: 42149174928     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903146     Document Type: Article

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