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Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2843-2848

Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE

(6) Kurouchi, M a Araki, T a Naoi, H a Yamaguchi, T a Suzuki, A a Nanishi, Y a

a RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

INGAN FILMS; RECIPROCAL SPACE MAPPING (RSM); SAPPHIRE SUBSTRATES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 7444234151 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/pssb.200405121 Document Type: Conference Paper

Times cited : (51)

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