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Volumn 56, Issue 19, 2008, Pages 5552-5559
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Phase separation and atomic ordering in InxAlyGa1-x-yN layers
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Author keywords
Atomic ordering; GaN; MOCVD; Phase separation; Transmission electron microscopy (TEM)
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Indexed keywords
ALUMINUM;
ATOMIC PHYSICS;
ATOMS;
CHEMICAL ANALYSIS;
CHEMICAL VAPOR DEPOSITION;
DIFFRACTION;
ELECTRON DIFFRACTION;
ELECTRON MICROSCOPES;
GALLIUM NITRIDE;
HOLOGRAPHIC INTERFEROMETRY;
ISOMERS;
MICROSCOPIC EXAMINATION;
MODULATION;
PHASE INTERFACES;
PHASE MODULATION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEPARATION;
SULFUR COMPOUNDS;
ATOMIC ORDERING;
ATOMIC ORDERINGS;
COMPOSITION MODULATIONS;
DIFFRACTION SPOTS;
DRIVING FORCES;
ELECTRON DIFFRACTION PATTERNS;
EXPERIMENTAL OBSERVATIONS;
GAN;
GREAT-ER;
LINE PROFILES;
MOCVD;
N LAYERS;
TRANSMISSION ELECTRONS;
PHASE SEPARATION;
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EID: 54249112235
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2008.07.032 Document Type: Article |
Times cited : (12)
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References (16)
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