Control of strain in GaN using an In doping-induced hardening effect

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 3, 2001, Pages

  Yamaguchi, Shigeo ^a   Kariya, Michihiko ^a   Kashima, Takayuki ^a   Nitta, Shugo ^a   Kosaki, Masayoshi ^a   Yukawa, Yohei ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; NITROGEN;

ARTICLE; CALCULATION; QUANTUM THEORY; RAMAN SPECTROMETRY; SEMICONDUCTOR; STRESS; X RAY DIFFRACTION;

EID: 0034910395     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.035318     Document Type: Article

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