Structural and optical properties of pseudomorphic InxGa1-xN alloys

Applied Physics Letters

Volumn 73, Issue 13, 1998, Pages 1757-1759

  Romano, L T ^a   Krusor, B S ^a   McCluskey, M D ^a   Bour, D P ^a   Nauka, K ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BIAXIAL STRAIN; VEGARD LAW;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032575805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122272     Document Type: Article

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