An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 35-39

  Zhou, S Q ^a   Wu, M F ^a   Hou, L N ^a   Yao, S D ^a   Ma, H J ^a   Nie, R ^a   Tong, Y Z ^a   Yang, Z J ^a   Yu, T J ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A1. Rutherford backscattering spectroscopy; A1. X ray diffraction; A3. Quantum wells

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POISSON RATIO; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; X RAY DIFFRACTION ANALYSIS;

MULTIPLE QUANTUM WELLS (MQW); QUANTUM BARRIERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 10744227103     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.046     Document Type: Article

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