Anisotropy of the elastic properties of wurtzite InN epitaxial films

Defect and Diffusion Forum

Volumn 226-228, Issue 1, 2004, Pages 79-89

  Harutyunyan, V S ^a   Specht, P ^a   Ho, J ^a   Weber, E R ^b  

^a University of California Berkeley   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Elastic Anisotropy; Point Defects; Strain; Wurtzite Nitrides; X Ray Diffraction

Indexed keywords

ANISOTROPY; CONCENTRATION (PROCESS); ELASTIC MODULI; POINT DEFECTS; POISSON RATIO; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; X RAY DIFFRACTION;

ELASTIC ANISOTROPY; ELASTIC PROPERTIES; EPITAXIAL FILMS; WURTZITE NITRIDES;

SEMICONDUCTING FILMS;

EID: 2942666144     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.226-228.79     Document Type: Article

References (34)

1. H. Morcos: Mat. Sci. and Engineering R Vol. 33 (2001), p. 135.
2. M.T. Duffy, C.C. Wang, G.D. O'Clock, S.H. McFalne III, P.J. Zanzucchi: J. Electron. Mater. Vol. 2 (1973), p. 359.
3. A.G. Bhuiyan, A. Hashimoto and A. Yamamoto: J. Appl. Phys. Vol. 94 (2003), p. 2779.
4. C. Kisielowski: Semicond. Semimet. Vol. 57 (1999), p. 275.
5. H. Lu, W.L. Schaff, J. Hwang, H. Wu, G. Koley and L.F. Eastman: Appl. Phys. Lett. Vol. 79 (2001), p. 1489.
6. A.F. Wright: J. Appl. Phys. Vol. 82 (1997), p. 2833.
7. J.-M. Wagner and F. Bechstedt: Phys. Rev. B Vol. 66 (2002), p. 115202.
8. I. Vurgaftman and J.R. Meyer: J. Appl. Phys. Vol. 94 (2003), p. 3675.
9. J.P. Hirth and J. Lothe: Theory of Dislocations (A Wiley-Intersci. Publ., New York 1982).
10. K. Suzuki, M. Ichihara and S. Takeuchi: Jap. J. Appl. Phys, Part 1 Vol. 33 (1994), p. 1114.
11. A.F. Wright: J. Appl. Phys. Vol. 82 (1997), p. 5259
12. V. Audurier, J.L. Dement and J. Rabier: Phil. Mag. A Vol. 77 (1998), p. 843.
13. K. Shimada, T. Sota and K. Suzuki: J. Appl. Phys. Vol. 84 (1998), p. 4951.
14. K. Kim, W.R.L. Lambrecht and B. Segall: Phys.Rev. B Vol. 50 (1994), p. 1502.
15. K. Kim, W.R.L. Lambrecht and B. Segall: Phys.Rev. B Vol. 53 (1996), p. 16310.
16. S.Yu.Davydov: Semiconductors Vol. 36 (2002), p. 41.
17. A.U. Sheleg and V.A. Savastenko: Izv. Akad. Nauk SSSR, Neorg. Mater. Vol. 15 (1979), p. 1598.
18. C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin and E.R. Weber: Phys. Rev. B Vol. 54 (1996), p. 17745.
19. V.S. Harutyunyan, A.P. Aivazyan, E.R. Weber, Y. Kim, Y. Park and S.G. Subramanya S.G: J. Phys. D: Appl.Phys. Vol. 34 (2001), p. A1.
20. E. Zieliñska-Rohoziñska, M. Regulska, V.S. Harutyunyan, K. Pakula and J. Borowski: Mater. Sci. and Engineering B Vol. 91-92 (2002), p. 441.
21. S.G. Lekhnitskii: Theory of Elasticity of an Anisotropic Elastic Body (Holden-Day, Inc., San Francisco 1963).
22. S.A. Ambartsumyan: Theory of Anisotropic Plates (Hemish. Publ. Corp., New York 1991).
23. R.F.S. Hearmon: An Introduction to Applied Anisotropic Elasticity (Oxford Univ. Press., London 1961).
24. A. Polian, M. Grimsditch and I.G. Grzegory: J. Appl. Phys. Vol. 79 (1996), p. 3343.
25. D.H. Chung and W.R. Buessem: in Anisotropy in Single-Crystal Refractory Compounds, edited by F.W. Vahldiek and S.A. Mersol (Plenum, New York 1968), Vol. 2.
26. L.E. McNail, M. Grmsditch and R.H. French: J. Am. Ceram. Soc. Vol. 76 (1993), p. 1132.
27. A.H. Cottrell: Dislocations and Plastic Flow in Crystals (Oxford University Press, Amen House, London 1953).
28. W.D. Nix: Metall. Trans. A Vol. 20 (1989), p. 2217.
29. A. Usikov, V.V. Ratnikov, R. Kyutt, W.V. Lundin, B. Pushnyi, N.M. Shmidt and M.P. Scheglov: MRS Internet J. Nitride Semicond. Res. 3, 42 (1998).
30. P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang and E.R. Weber: J. Cryst. Growth, in press.
31. G.K. Williamson and W.H. Hall: Acta Metall. Vol. 1 (1953), p. 22.
32. G.S. Cargill, III, J. Angilello and K.L. Kavanagh: Phys. Rev. Lett. Vol. 61 (1988), p. 1748.
33. O. Lagerstedt and B. Monemar: Phys. Rev. B Vol. 19 (1979), p. 3064.
34. J.A. Van Vechten and J.C. Phillips: Phys. Rev. B Vol. 2 (1970), p. 2160.