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Volumn 216, Issue 1, 1999, Pages 171-174

Photoluminescence mapping and rutherford backscattering spectrometry of InGaN epilayers

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTALLINITY; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR ALLOYS; SPECTROMETRY;

EID: 0033242871     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3951(199911)216:1<171::aid-pssb171>3.0.co;2-%23     Document Type: Article
Times cited : (11)

References (9)
  • 9
    • 0033242864 scopus 로고    scopus 로고
    • K. P. O'DONNELL, R. W. MARTIN, M. E. WHITE, J. F. W. MOSSELMANS and QIXIN GUO, 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (b) 216, 151 (1999).
    • (1999) Phys. Stat. Sol. (B) , vol.216 , pp. 151


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.