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Volumn 216, Issue 1, 1999, Pages 171-174
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Photoluminescence mapping and rutherford backscattering spectrometry of InGaN epilayers
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Author keywords
[No Author keywords available]
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Indexed keywords
BACKSCATTERING;
CRYSTALLINITY;
EPILAYERS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
INDIUM;
PHOTOLUMINESCENCE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTOR ALLOYS;
SPECTROMETRY;
EXPERIMENTAL TECHNIQUES;
INDIUM FRACTIONS;
INGAN EPILAYERS;
LINEAR RELATIONSHIPS;
PHOTOLUMINESCENCE MAPPING;
POOR CRYSTALLINITY;
RUTHERFORD BACKSCATTERING SPECTROMETRY;
STRUCTURAL CHARACTERISTICS;
INDIUM ALLOYS;
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EID: 0033242871
PISSN: 03701972
EISSN: None
Source Type: Journal
DOI: 10.1002/(sici)1521-3951(199911)216:1<171::aid-pssb171>3.0.co;2-%23 Document Type: Article |
Times cited : (11)
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References (9)
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