Single phase Inx Ga1-x N (0.25x0.63) alloys synthesized by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Pantha, B N ^a   Li, J ^a   Lin, J Y ^b   Jiang, H X ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; CONCENTRATION (PROCESS); ELECTRON MOBILITY; GALLIUM ALLOYS; INDIUM; INDUSTRIAL CHEMICALS; METALLIC COMPOUNDS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHASE SEPARATION; SURFACE ROUGHNESS; VAPORS;

ATOMIC FORCES; CONCENTRATION INCREASES; IN COMPOSITIONS; IN DROPLETS; INGAN ALLOYS; METAL ORGANIC; MISCIBILITY GAPS; SINGLE PEAKS; X-RAY DIFFRACTIONS;

CHEMICAL VAPOR DEPOSITION;

EID: 55849103204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3006432     Document Type: Article

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