Strain relaxation in graded InGaN/GaN epilayers grown on sapphire

Applied Physics Letters

Volumn 83, Issue 8, 2003, Pages 1545-1547

  Song, T L ^a   Chua, S J ^a   Fitzgerald, E A ^a,c   Chen, P ^b   Tripathy, S ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM NITRIDE; SAPPHIRE; STRAIN;

EPILAYERS;

INDIUM COMPOUNDS;

EID: 0042281654     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598295     Document Type: Article

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