Complete composition tunability of InGaN nanowires using a combinatorial approach

Nature Materials

Volumn 6, Issue 12, 2007, Pages 951-956

  Kuykendall, Tevye ^a   Ulrich, Philipp ^a   Aloni, Shaul ^b   Yang, Peidong ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; INDIUM ALLOYS; LIGHTING; PHOTOVOLTAIC EFFECTS; THIN FILMS;

COMPLETE COMPOSITION TUNABILITY; HIGH-EFFICIENCY SOLID-STATE LIGHTING; SINGLE-CRYSTALLINE NANOWIRES; TUNABLE EMISSION;

NANOWIRES;

EID: 36749077675     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2037     Document Type: Review

References (35)

1. Schubert, E. F. & Kim, J. K. Solid-state light sources getting smart. Science 308, 1274-1278 (2005).
2. xN alloys: Full-solar-spectrum photovoltaic material system. J. Appl. Phys. 94, 6477-6482 (2003).
3. Kung, F. & Razeghi, M. III-Nitride wide bandgap semiconductors: A survey of the current status and future trends of the material and device technology. Opto-Electron. Rev. 8, 201-239 (2000).
4. Schenk, H. P. D. et al. Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN. Appl. Phys. Lett. 75, 2587-2589 (1999).
5. 1-xN alloys grown by metalorganic chemical vapor deposition. J. Appl. Phys. 84, 4452-4458 (1998).
6. 1-xN/GaN) In layered structures and reduction of indium droplets. J. Cryst. Growth 145, 209-213 (1994).
7. Yoshimoto, N., Matsuoka, T., Sasaki, T. & Katsui, A. Photoluminescence of indium gallium nitride films grown at high temperature by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 59, 2251-2253 (1991).
8. xN alloys. Appl. Phys. Lett. 80, 4741-4743 (2002).
9. 1-xN using chloride sources. J. Cryst. Growth 189-190, 37-41 (1998).
10. Davydov, V. Y. et al. Band gap of hexagonal InN and InGaN alloys. Phys. Status Solidi B 234, 787-795 (2002).
11. Morkoc, H. Nitride Semiconductors and Devices (Springer, Berlin, 1999).
12. Perkins, N. R. et al. Growth of thick GaN films by halide vapor phase epitaxy. Proc. Electrochem. Soc. 96-5, 336-341 (1996).
13. Lu, D. et al. Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE. Phys. Lett A 327, 78-82 (2004).
14. 1-xN: TEM and X-ray studies. J. Electron Microscopy 54, 243-250 (2005).
15. Kuykendall, T. et al. Crystallographic alignment of high-density gallium nitride nanowire arrays. Nature Mater. 3, 524-528 (2004).
16. Sun, Y., Cho, Y.-H., Kim, H.-M. & Kang, T. W. High efficiency and brightness of blue light emission from dislocation-free InGaN/GaN quantum well nanorod arrays. Appl. Phys. Lett. 87, 093115 (2005).
17. Ertekin, E., Greaney, P. A., Chrzan, D. C. & Sands, T. D. Equilibrium limits of coherency in strained nanowire heterostructures. J. Appl. Phys. 97, 114325 (2005).
18. Fuhrmann, D. et al. Optimization scheme for the quantum efficiency of GaInN-based green light-emitting diodes. Appl. Phys. Lett. 88, 071105 (2006).
19. Fuhrmann, D. et al. Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters. Phys. Status Solidi C 3, 1966-1969 (2006).
20. Qian, F., Gradecak, S., Li, Y., Wen, C.-Y. & Lieber, C. M. Core/Multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. Nano Lett. 5, 2287-2291 (2005).
21. Kim, H.-M. et al. High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays. Nano Lett. 4, 1059-1062 (2004).
22. Kim, H.-M. et al. Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy. Phys. Status Solidi B 241, 2802-2805 (2004).
23. 3 J. Cryst. Growth 231, 57-67 (2001).
24. Scholz, F. et al. Low pressure MOVPE of GaN and GaInN/GaN heterostructures. J. Cryst. Growth 170, 321-324 (1997).
25. Doppalapudi, D., Basu, S. N., Ludwig, K. F. Jr & Moustakas, T. D. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy. J. Appl. Phys. 84, 1389-1395 (1998).
26. Yang, B. et al. Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Mater. Sci. Forum 264-268, 1235-1238 (1998).
27. Snyder, R. L., Fiala, J. & Bunge, H. J. (eds) Defect and Microstructure Analysis by Diffraction (Int. Union Crystallogr. Monogr. Crystallogr., Vol. 10, Oxford Univ. Press, Oxford, 1999).
28. Mattila, T. & Zunger, A. Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys. J. Appl. Phys. 85, 160-167 (1999).
29. Ho, I. H. & Stringfellow, G. B. Solid phase immiscibility in GaInN. Appl. Phys. Lett. 69, 2701-2703 (1996).
30. 1-xN alloys: Comparison between cubic and wurtzite structures. Phys. Rev. B 74, 045215 (2006).
31. Liliental-Weber, Z. et al. Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies. J. Electron. Mater. 30, 439-444 (2001).
32. Stach, E. A. et al. Watching GaN nanowires grow. Nano Lett. 3, 867-869 (2003).
33. Waltereit, P. et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865-868 (2000).
34. Shubina, T. V. et al. Mie resonances, infrared emission, and the band gap of InN. Phys. Rev. Lett. 92, 117407 (2004).
35. Wu, J. et al. Effects of the narrow band gap on the properties of InN. Phys. Rev. B 66, 201403 (2002).