Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells

Solid State Communications

Volumn 131, Issue 12, 2004, Pages 763-767

  Lepkowski S P ^a   Majewski, J A ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

A. Quantum wells; A. Semiconductors; D. Elasticity; D. Optical properties

Indexed keywords

ELASTICITY; ENERGY GAP; FUNCTIONS; LATTICE CONSTANTS; LIGHT EMISSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PIEZOELECTRIC MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SHEAR DEFORMATION; ZINC;

BIAXIAL STRAIN; ELASTIC CONSTANT; PRESSURE COEFFICIENT; ZINC-BLENDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4243097095     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.07.002     Document Type: Article

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