Vegard's law deviation in band gap and bowing parameter of Al xIn1-xN

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 3, 2005, Pages 651-655

  Liou, B T ^a   Yen, S H ^b   Kuo, Y K ^a,b  

^a HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; LATTICE CONSTANTS; PHYSICAL PROPERTIES;

BAND GAP PROPERTIES; EQUILIBRIUM ENERGY; VALENCE BAND; VEGARD LAW;

SEMICONDUCTOR MATERIALS;

EID: 21644443748     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-2711-1     Document Type: Article

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