Critical thickness of GaN thin films on sapphire (0001)

Applied Physics Letters

Volumn 69, Issue 16, 1996, Pages 2358-2360

  Kim, Chinkyo ^a   Robinson, I K ^a   Myoung, Jaemin ^b   Shim, Kyuhwan ^b   Yoo, Myung Cheol ^b,c   Kim, Kyekyoon ^b  

^a United States of America   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001375353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117524     Document Type: Article

References (18)

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