On the interpretation of structural and light emitting properties of InGaN/GaN epitaxial layers grown above and below the critical layer thickness

Thin Solid Films

Volumn 515, Issue 1, 2006, Pages 164-169

  Pereira, S ^a,b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Composition; InGaN; Semiconductor alloy; Strain; X ray diffraction

Indexed keywords

CRITICAL LAYER THICKNESS; ELASTIC STRAIN RELAXATION; ENERGY SPLITTING; INGAN; SEMICONDUCTOR ALLOY;

EPITAXIAL GROWTH; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; STRAIN; X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 33750077635     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.144     Document Type: Article

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