Engineering of Quantum Dot Nanostructures for Photonic Devices

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

Volumn , Issue , 2008, Pages 505-528

  Seravalli, L ^a   Trevisi, G ^a   Minelli, M ^a   Frigeri, P ^a   Franchi, S ^a  

^a IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MEDICAL APPLICATIONS; NANOCRYSTALS; NANOSTRUCTURES; OPTICAL FIBERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM DOTS;

GAAS SUBSTRATES; HYDROXYL CONTENT; QD LASERS; QUANTUM DOT NANOSTRUCTURES; SEMICONDUCTOR QDS; SPECTRAL WINDOWS; TELECOM; ZERO-DIMENSIONAL;

PHOTONIC DEVICES;

EID: 67649315027     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-0-08-046325-4.00016-5     Document Type: Chapter

References (103)

1. Bimberg D., Grundmann M., Ledentsov N.N. Quantum Dot Heterostructures 1999, Wiley, Chichester.
2. Skolnick M.S., Mowbray D.J. Annu. Rev. Mater. Sci. 2004, 34:181.
3. Ustinov V.M., Zhukov A.E., Egorov A.Yu., Maleev N.A. Quantum Dot Lasers 2003, Oxford University Press, Oxford.
4. Bhattacharya P., Ghosh S., Stiff-Roberts A.D. Annu. Rev. Mater. Sci. 2004, 34:1.
5. Grassi Alessi M., Capizzi M., Bhatti A.S., Frova A., Martelli F., Frigeri P., Bosacchi A., Franchi S. Phys. Rev. B 1999, 59:7620.
6. Briones F., Ruiz A. Atomic layer molecular beam epitaxy (ALMBE) is a variant of molecular beam epitaxy (MBE) where group III and group V species impinge on the substrate alternatively in monolayer or sub-monolayer amounts per cycle. J. Cryst. Growth, 1991, 111:194.
7. Mirin R.P., Ibbetson J.P., Bowers J.E., Gossard A.C. J. Cryst. Growth 1997, 175(176):696.
8. Bosacchi A., Frigeri P., Franchi S., Allegri P., Avanzini V. J. Cryst. Growth. 1997, 175(176):771.
9. Mirin R.P., Ibbetson J.P., Nishi K., Gossard A.C., Bowers J.E. Appl. Phys. Lett. 1995, 67:3795.
10. Mukai K., Ohtsuka N., Sugawara M., Yamazaki S. Jpn. J. Appl. Phys. 1994, 33:L1710.
11. Krishna S., Zhu D., Xu J., Linder K.K., Qasaimeh O., Bhattacharya P., Huffaker D.L. J. Appl. Phys. 1999, 86:6135.
12. Nakata Y., Mukai K., Ohtsuka N., Sugawara M., Ishikawa H., Yokoyama N. J. Cryst. Growth 2000, 93:208.
13. Murray R., Childs D., Malik S., Siverns P., Roberts C., Hartmann J., Stavrinou P. Jpn. J. Appl. Phys. 1999, 38:528.
14. Le Ru E.C., Howe P., Jones T.S., Murray R. Phys. Rev. B 2003, 67:165303.
15. da Silva M.J., Quivy A.A., Martini S., Lamas T.E., da Silva E.C.F., Leite J.R. Appl. Phys. Lett. 2003, 82:2646.
16. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 1995, 75:2542.
17. Mukhametzhanov I., Heitz R., Zheng J., Chen P., Madhukar A. Appl. Phys. Lett. 2003, 73:1841.
18. Mi Z., Bhattacharya P. J. Appl. Phys. 2005, 98:023510.
19. Ustinov V.M., Maleev N.A., Zhukov A.E., Kovsh A.R., Yu.Egorov A., Lunev A.V., Volovik B.V., Krestnikov I.L., Musikhin Y.G., Bert N.A., Kop'ev P.S., Alferov Zh.I., Ledentsov N.N., Bimberg D. Appl. Phys. Lett. 1999, 74:2815.
20. Nishi K., Saito H., Sugou S., Lee J. Appl. Phys. Lett. 1999, 74:1111.
21. Yeh N.T., Nee T.E., Chyi J.I., Hsu T.M., Huang C.C. Appl. Phys. Lett. 2000, 76:1567.
22. Stintz A., Liu G.T., Gray A.L., Spillers R., Delgado S.M., Malloy K.J. J. Vac. Sci. Technol. B 2000, 18:1496.
23. Ferdos F., Sadeghi M., Zhao Q.X., Wang S.M., Larsson A. J. Cryst. Growth. 2000, 227(228):1140.
24. Liu H.Y., Wang X.D., Wu J., Xu B., Wei Y.Q., Jiang W.H., Ding D., Ye X.L., Lin F., Zhang J.F., Liang J.B., Wang Z.G. J. Appl. Phys. 2000, 88:3392.
25. Tatebayashi J., Nishioka M., Arakawa Y. Appl. Phys. Lett. 2001, 78:3469.
26. Guffarth F., Heitz R., Schliwa A., Stier O., Ledentsov N.N., Kovsh A.R., Ustinov V.M., Bimberg D. Phys. Rev. B 2001, 64:085305.
27. Chen J.X., Markus A., Oesterle U., Fiore A., Stanley R.P., Ilegems M., Carlin J.F., Houdrè R., Lazzarini L., Nasi L., Todaro M.T., Piscopiello E., Cingolani R., Catalano M., Katcki J., Ratajczak J. J. Appl. Phys. 2002, 91:6710.
28. Liu H.Y., Sellers I.R., Hopkinson M., Harrison C.N., Mowbray D.J., Skolnick M.S. Appl. Phys. Lett. 2003, 83:3716.
29. Kim J.S., Lee J.H., Hoing S.U., Han W.S., Kwack H.S., Lee C.W., Oh D.K. J. Appl. Phys. 2003, 94:6603.
30. Hsieh T.P., Yeh N.T., Chiu P.C., Chang W.H., Hsu T.M., Ho W.J., Chyi L.I. Appl. Phys. Lett. 2005, 87:151903.
31. Sun Z.Z., Yoon S.F., Loke W.K., Liu C.Y. Appl. Phys. Lett. 2006, 88:203114.
32. Maximov M.V., Tsatsul'nikov A.F., Volovik B.V., Sizov D.S., Shernyakov Y.U.M., Kaiander I.N., Zhukov A.E., Kovsh A.R., Mikhrin S.S., Ustinov V.M., Alferov Zh.I., Heitz R., Shchukin V.A., Ledentsov N.N., Bimberg D., Musikhin Yu.G., Neumann W. Phys. Rev. B 2000, 62:16671.
33. Chang W.H., Chen H.Y., Chang H.S., Chen W.Y., Hsu T.M., Hsieh T.P., Chyi J.I., Yeh N.T. Appl. Phys. Lett. 2005, 86:131917.
34. Seravalli L., Minelli M., Frigeri P., Allegri P., Avanzini V., Franchi S. Appl. Phys. Lett. 2003, 82:2341.
35. Zhukov A.E., Vasil'yev A.P., Kovsh A.R., Mikhrin S.S., Semenova E.S., Egorov A.Yu., Odnoblyudov V.A., Maleev N.A., Nikitina E.V., Kryjanovskaya N.V., Gladyshev A.G., Shernyakov Y.M., Maximov M.V., Ledentsov N.N., Ustinov V.M., Alferov Zh.I. Semiconductors 2003, 37:1411.
36. Seravalli L., Minelli M., Frigeri P., Allegri P., Avanzini V., Franchi S. Appl. Phys. Lett. 2005, 87:063101.
37. Mi Z., Bhattacharya P., Yang J. Appl. Phys. Lett. 2006, 89:153109.
38. Seravalli L., Minelli M., Frigeri P., Franchi S., Guizzetti G., Patrini M., Ciabattoni T., Geddo M. J. Appl. Phys. 2007, 101:024313.
39. Drigo A.V., Aydinii A., Carnera A., Genova F., Rigo C., Ferrari C., Franzosi P., Salviati G. J. Appl. Phys. 1989, 66:1975.
40. People R., Bean J.C. Appl. Phys. Lett. 1986, 49:229.
41. Marée P.M.J., Barbour J.C., Van der Veen J.F., Kavanagh K.L., Bulle-Lieuwma C.W.T., Viegers M.P.A. J. Appl. Phys. 1987, 62:4413.
42. Matthews J.W., Blakeslee A.E. J. Cryst. Growth 1974, 27:118.
43. Ball C.A.B., van der Merwe J.H. Dislocation in Solids 1983, North-Holland, Amsterdam. F.R.N. Nabarro (Ed.).
44. Dunstan D.J. Philos. Mag. A 1996, 73:1323.
45. Geddo M., Guizzetti G., Patrini M., Ciabattoni T., Seravalli L., Frigeri P., Franchi S. Appl. Phys. Lett. 2005, 87:263120.
46. V. Bellani, C. Bocchi, T. Ciabattoni, S. Franchi, P. Frigeri, P. Galinetto, M. Geddo, F. Germini, G. Guizzetti, L. Nasi, M. Patrini, L. Seravalli, and G. Trevisi, submitted to Europ. Phys. J. B.
47. Andreev A.D., Downes J.R., Faux D.A., O'Reilly E.P. J. Appl. Phys. 1999, 86:297.
48. Pollak F.H. Strained layer superlattices: physics. Semiconductors and Semimetals 1990, Vol. 32. Academic, Boston. T.P. Pearsall (Ed.).
49. Andreani L.C., De Nova D., Di Lernia S., Geddo M., Guizzetti G., Patrini M., Bocchi C., Bosacchi A., Ferrari C., Franchi S. J. Appl. Phys. 1995, 78:6745.
50. Varshni Y.P. Physica (Utrecht) 1967, 34:149.
51. Sanguinetti S., Henini M., Grassi Alessi M., Capizzi M., Frigeri P., Franchi S. Phys. Rev. B 1999, 60:8276.
52. Le Ru E.C., Fack J., Murray R. Phys. Rev. B 2003, 67:245318.
53. Colombo D., Sanguinetti S., Grilli E., Guzzi M., Martinelli L., Gurioli M., Frigeri P., Trevisi G., Franchi S. J. Appl. Phys. 2003, 94:6513.
54. Mazzucato S., Nardin D., Capizzi M., Polimeni A., Frova A., Frigeri P., Seravalli L., Franchi S. Mat. Sci. Eng. C 2005, 25:830.
55. Mukai K., Ohtsuka N., Sugawara M. Appl. Phys. Lett. 1997, 70:2416.
56. Marzin J.Y., Bastard G. Sol. Stat. Commuu. 1994, 92:437.
57. Cusack M.A., Briddon P.R., Jaros M. Phys. Rev. B 1996, 54:R2300.
58. Jiang H., Singh J. Phys. Rev. B 1997, 56:4696.
59. Williamson A.J., Wang L.W., Zunger A. Phys. Rev. B 2000, 62:12963.
60. Cipriani G., Rosa-Clot M., Taddei S. Phys. Rev. B 2000, 62:4413.
61. Yoffe A.D. Adv. in Phys. 2001, 50:1.
62. Bruls D.M., Vugs J.W.A.M., Koenraad P.M., Salemink H.W.M., Wolter J.H., Hopkinson M., Skolnick M.S., Long F., Gill S.P.A. Appl. Phys. Lett. 2002, 81:1708.
63. Gong Q., Offermans P., Notzel R., Koenraad P.M., Wolter J.H. Appl. Phys. Lett. 2004, 85:5697.
64. Van de Walle C.G. Phys. Rev. B 1989, 39:1871.
65. Cardona M., Christensen N.E. Phys. Rev. B 1988, 37:1011.
66. Vurgaftman I., Meyer J.R., Ram-Mohan L.R. J. Appl. Phys. 2001, 89:5815.
67. Grundmann M., Stier O., Bimberg D. Phys. Rev. B 1995, 52:11969.
68. Pearson G.S., Faux D.A. J. Appl. Phys. 2000, 88:730.
69. Sopanen M., Xin H.P., Tu C.W. Appl. Phys. Lett. 2000, 76:994.
70. Yew K.C., Yoon S.F., Sun Z.Z., Wang S.Z. J. Cryst. Growth 2003, 247:279.
71. Tomic S. Phys. Rev. B 2006, 73:125348.
72. Kita T., Mori T., Seki H., Matsushita M., Kikuno M., Wada O., Ebe H., Sugawara M., Arakawa Y., Nakata Y. J. Appl. Phys. 2005, 97:024306.
73. Schumann O., Geelhaar L., Reichert H., Cerva H., Abstreiter G. J. Appl. Phys. 2004, 96:2832.
74. Bais G., Cristofoli A., Jabeen F., Piccin M., Carlino E., Rubini S., Martelli F., Franciosi A. Appl. Phys. Lett. 2005, 86:233107.
75. Sallet V., Patriarche G., Merat-Combes M.N., Largeau L., Mauguin O., Travers L. J. Cryst. Growth 2006, 290:80.
76. Suzuki K., Arakawa Y. Phys. Status Solidi B 2001, 224:139.
77. Qiu Y.M., Uhl D., Keo S. Appl. Phys. Lett. 2004, 84:263.
78. Kudo M., Nakaoka T., Iwamoto S., Arakawa Y. Jpn. J. Appl. Phys. Part 2 2005, 44:L45.
79. Qiu Y.M., Uhl D. Appl. Phys. Lett. 2004, 84:1510.
80. Sun Y., Cheng S.F., Chen G., Hicks R.F., Cederberg J.G., Biefeld R.M. J. Appl. Phys. 2005, 97:053503.
81. He J., Xu B., Wang Z.G. Appl. Phys. Lett. 2004, 84:5237.
82. Zhang Z.Y., Xu B., Jin P., Meng X.Q., Li Ch.M., Ye X.L., Wang Z.G. J. Appl. Phys. 2002, 92:511.
83. Wei Y.Q., Wang S.M., Ferdos F., Vukusic J., Larsson A., Zhao Q.X., Sadeghi M. Appl. Phys. Lett. 2002, 81:1621.
84. L. Seravalli, P. Frigeri, P. Allegri, V. Avanzini, and S. Franchi, Mat. Sci. Eng. C (in press).
85. Jia R., Jiang D.S., Liu H.Y., Wei Y.Q., Xu B., Wang Z.G. J. Cryst. Growth 2002, 234:354.
86. Sellers I.R., Liu H.Y., Hopkinson M., Mowbray D.J., Skolnick M.S. Appl. Phys. Lett. 2003, 83:4710.
87. Arzberger M., Kasberger U., Bohm G., Abstreiter G. Appl. Phys. Lett. 1999, 75:3968.
88. Chang K.P., Yang S.L., Chuu D.S., Hsiao R.S., Chen J.F., Wei L., Wang J.S., Chi J.Y. J. Appl. Phys. 2005, 97:083511.
89. Zhukov A.E., Kovsh A.R., Ustinov V.M., Ledentsov N.N., Alferov Zh.I. Microelectron. Eng. 2005, 81:229.
90. Kettler T., Karachinsky L.Ya., Ledentsov N.N., Shchukin V.A., Fiol G., Kunts M., Lochmann A., Schulz O., Reissmann L., Posilovic K., Bimberg D., Novikov I.I., Shernyakov Y.u.M., Gordeev N.Y.u., Maximov M.V., Kryjanovskaya N.V., Zhukov A.E., Semenova E.S., Vasil'yev A.P., Ustinov V.M., Kovsh A.R. Appl. Phys. Lett. 2006, 89:041113.
91. Zhukov A.E., Egorov A.Yu., Kovsh A.R., Ustinov V.M., Ledentsov N.N., Maksimov M.V., Tsatsulnikov A.F., Zaitsev S.V., Gordeev N.Yu., Kop'ev P.S., Alferov Zh.I., Bimberg D. Semiconductors 1997, 31:411.
92. Klopf F., Reithmaier J.P., Forchel A. J. Cryst. Growth. 2001, 227(228):1151.
93. Ballet P., Smathers J.B., Yang H., Workman C.L., Salamo G.J. J. Appl. Phys. 2001, 90:481.
94. Offermans P., Koenraad P.M., Wolter J.H., Pierz K., Roy M., Maksym P.A. Physica E 2005, 26:236.
95. Ibáñez J., Cuscó R., Artús L., Henini M., Patanè A., Eaves L. Appl. Phys. Lett. 2006, 88:141905.
96. Polimeni A., Patanè A., Henini M., Eaves L., Main P.C. Phys. Rev. B 1999, 59:5064.
97. Gurioli M., Testa S., Altieri P., Sanguinetti S., Grilli E., Guzzi M., Trevisi G., Frigeri P., Franchi S. Physica E 2003, 17:19.
98. Liu H.Y., Sellers I.R., Badcock T.J., Mowbray D.J., Skolnick M.S., Groom K.M., Gutierrez M., Hopkinson M., Ng J.S., David J.P.R., Beanland R. Appl. Phys. Lett. 2004, 85:704.
99. Leonard D., Krishnamurthy M., Reaves C.M., Denbaars S.P., Petroff P.M. Appl. Phys. Lett. 1993, 63:3203.
100. Kamath K., Bhattacharya P., Phillips J. J. Cryst. Growth. 1997, 175(176):720.
101. Li H., Zhuang Q., Wang Z., Daniels-Race T. J. Appl. Phys. 2000, 87:188.
102. Cullis A.G., Norris D.J., Migliorato M.A., Hopkinson M. Appl. Surf. Sci. 2005, 244:65.
103. Orr B.G., Kessler D., Snyder C.W., Sander L. Europhys. Lett. 1992, 19:33.