Tuning the wetting layer in the InGaAs/AlGaAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 19-21

  Gurioli, M ^a,b,d   Testa, S ^a   Altieri, P ^a   Sanguinetti, S ^a   Grilli, E ^a   Guzzi, M ^a   Trevisi, G ^c   Frigeri, P ^c   Franchi, S ^c  

^a INFM   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

^c IMEM CNR   (Italy)

^d UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Carrier thermalization; Quantum dots

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WETTING;

WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037393288     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00708-7     Document Type: Conference Paper

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