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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 236-240

Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

(6) Offermans, P a Koenraad, P M a Wolter, J H a Pierz, K b Roy, M c Maksym, P A c

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b PHYSIKALISCH TECHNISCHE BUNDESANSTALT (Germany)

c UNIVERSITY OF LEICESTER (United Kingdom)

Author keywords

Molecular beam epitaxy; Quantum dots; Relaxation; Semiconducting III V materials; Strain; X STM

Indexed keywords

ELASTICITY; FINITE ELEMENT METHOD; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; THREE DIMENSIONAL;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (X-STM); SEMICONDUCTING III-V MATERIALS; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444252641 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.08.104 Document Type: Conference Paper

Times cited : (26)

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