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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 696-701

Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy

(4) Mirin, Richard P a,b Ibbetson, James P a Bowers, John E a Gossard, Arthur C a

a University of California (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

Indium gallium arsenide; MBE; Quantum dots

Indexed keywords

DEGRADATION; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ALTERNATING MOLECULAR BEAM EPITAXY; STRANSKI KRASTANOW GROWTH TRANSITION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031143377 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00870-6 Document Type: Article

Times cited : (24)

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