Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6513-6517

  Colombo, D ^a   Sanguinetti, S ^a   Grilli, E ^a   Guzzi, M ^a   Martinelli, Lucio ^a   Gurioli, M ^b   Frigeri, P ^c   Trevisi, G ^c   Franchi, S ^c  

^a INFM   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

^c IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GROUND STATE; PHOTOLUMINESCENCE; PROBABILITY; QUENCHING; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WETTING;

CARRIER TRAPPING; PHOTOEXCITED CARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0345329998     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622775     Document Type: Article

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