1.3 μm lasers with AllnAs-capped self-assembled quantum dots

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4710-4712

  Sellers, I R ^a   Liu, H Y ^a   Hopkinson, M ^a   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

OPTICAL EFFICIENCY; THERMAL EXCITATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0347567454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632533     Document Type: Article

References (13)

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13. -2 with only one facet HR coated.