High photoluminescence efficiency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique

Applied Physics Letters

Volumn 70, Issue 18, 1997, Pages 2416-2418

  Mukai, Kohki ^a   Ohtsuka, Nobuyuki ^a   Sugawara, Mitsuru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001628467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118889     Document Type: Article

References (22)

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