Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6710-6716

  Chen, J X ^a   Markus, A ^a   Fiore, A ^a   Oesterle, U ^a   Stanley, R P ^a   Carlin, J F ^a   Houdre R ^a   Ilegems, M ^a   Lazzarini, L ^b   Nasi, L ^b   Todaro, M T ^c   Piscopiello, E ^c   Cingolani, R ^c   Catalano, M ^d   Katcki, J ^e   Ratajczak, J ^e  

^a EPFL   (Switzerland)

^b IMEM CNR   (Italy)

^c INFM   (Italy)

^d CNR   (Italy)

^e ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; DOT DENSITY; EMISSION WAVELENGTH; GROUND STATE TRANSITION; GROWTH PARAMETERS; GROWTH TECHNIQUES; INAS QUANTUM DOTS; INAS/GAAS; INDIUM FRACTIONS; INTENSITY SATURATION; ISLAND SIZE; PHOTOLUMINESCENCE MEASUREMENTS; RADIATIVE EFFICIENCY; ROOM TEMPERATURE; STATE TRANSITIONS; STRANSKI-KRASTANOV GROWTH MODE; STRANSKI-KRASTANOV MODE; STRUCTURAL AND OPTICAL PROPERTIES; SYSTEMATIC STUDY; TEMPERATURE-DEPENDENT MEASUREMENTS;

GROUND STATE; INDIUM; INDIUM ARSENIDE; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037094740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476069     Document Type: Article

References (20)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). apl APPLAB 0003-6951
2. M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. QE-22, 1915 (1986). ejq IEJQA7 0018-9197
3. For a review, D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
4. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, Appl. Phys. Lett. 73, 2564 (1998). apl APPLAB 0003-6951
5. A. E. Zhukov et al., IEEE Photonics Technol. Lett. 11, 1345 (1999). ptl IPTLEL 1041-1135
6. Y. M. Shernyakov et al., Electron. Lett. 35, 898 (1999). ell ELLEAK 0013-5194
7. G. T. Liu, A. Stintz, H. Li, T. C. Newell, A. L. Gray, P. M. Varangis, K. J. Malloy, and L. F. Lester, IEEE J. Quantum Electron. 36, 1272 (2000). ejq IEJQA7 0018-9197
8. D. L. Huffaker and D. G. Deppe, Appl. Phys. Lett. 73, 520 (1998). apl APPLAB 0003-6951
9. A. Fiore, U. Oesterle, R. P. Stanley, and M. Ilegems, IEEE Photonics Technol. Lett. 12, 1601 (2000). ptl IPTLEL 1041-1135
10. J. X. Chen, U. Oesterle, A. Fiore, R. P. Stanley, M. Ilegems, and T. Todaro, Appl. Phys. Lett. 79, 3681 (2001). apl APPLAB 0003-6951
11. H. Drexler, D. Leonard, W. Hansen, J. P. Kotthaus, and P. M. Petroff, Phys. Rev. Lett. 73, 2252 (1994). prl PRLTAO 0031-9007
12. P. Michler, A. Kiraz, C. Becher, W. V. Schoefeld, P. M. Petroff, L. Zhang, E. Hu, and A. Imamoglu, Nature (London) 290, 2282 (2000). nat NATUAS 0028-0836
13. V. Zwiller, H. Blom, P. Jonsson, N. Paner, S. Jeppesin, T. Tsegaye, E. Goobar, M. Pisto, L. Samuelson, and G. Björk, Appl. Phys. Lett. 78, 2476 (2001). apl APPLAB 0003-6951
14. M. V Maximov et al., Physica E (Amsterdam) 7, 326 (2000). 2by PELNFM 1386-9477
15. N-T. Yeh, T.-E. Nee, J.-I. Chyi, T. M. Hsu, and C. C. Huang, Appl. Phys. Lett. 76, 1567 (2000). apl APPLAB 0003-6951
16. P. B. Joyce, T. J. Krzyewski, G. R. Bell, and T. S. Jones, Phys. Rev. B 62, 10891 (2000). prb PRBMDO 0163-1829
17. H. T. Dobbs, D. D. Vvedensky, A. Zangwill, J. Johansson, N. Carsson, and W. Seifert, Phys. Rev. Lett. 79, 897 (1997). prl PRLTAO 0031-9007
18. J. Tersoff, Phys. Rev. Lett. 81, 3183 (1998). prl PRLTAO 0031-9007
19. R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, J. Electron. Mater. 28, 520 (1999). jem JECMA5 0361-5235
20. H. Benisty, R. P. Stanley, and M. Mayer, J. Opt. Soc. Am. A 15, 1192 (1998). joa JOAOD6 0740-3232