Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3716-3718

  Liu, H Y ^a   Sellers, I R ^a   Hopkinson, M ^a   Harrison, C N ^a   Mowbray, D J ^a   Skolnick, M S ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GROUND STATE; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BUFFER LAYER; CARRIER CONFINEMENT; HIGH TEMPERATURE PHOTOLUMINESCENCE INTENSITY; STRAIN REDUCING LAYER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0345359908     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622443     Document Type: Article

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