Optimisation of MBE growth conditions for InAs quantum dots on (0 0 1) GaAs for 1.3 μm luminescence

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1140-1145

  Ferdos, F ^a   Sadeghi, M ^a   Zhao, Q X ^a   Wang, S M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B3. Laser diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; LUMINESCENCE OF SOLIDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

EMISSION WAVELENGTH; LUMINESCENCE INTENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398825     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01003-X     Document Type: Conference Paper

References (15)