Extended wavelength emission to 1.3 μm in nitrided InAsGaAs self-assembled quantum dots

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Kita, T ^a   Mori, T ^a   Seki, H ^a   Matsushita, M ^a   Kikuno, M ^a   Wada, O ^a   Ebe, H ^b   Sugawara, M ^b   Arakawa, Y ^b   Nakata, Y ^c  

^a KOBE UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE; LATTICE MISMATCH; QUANTUM DOT (QD) LASERS; THERMAL CARRIER; WAVELENGTH EMISSION;

ATOMIC FORCE MICROSCOPY; FIBER OPTICS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDING; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 19944430136     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1833578     Document Type: Article

References (21)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, New York, 1998).
3. M. Sugawara, Semiconductor and Semimetals, edited by, M. Sugawara, (Academic, San Diego, 1999), Vol. 60.
4. N. N. Ledentsov, Electron. Lett. 39, 1126 (2003).
5. Y. Nakata, Y. Sugiyama, K. Mukai, T. Futatsugi, H. Shoji, M. Sugawara, H. Ishikawa, and N. Yokoyama, Inst. Phys. Conf. Ser. No. 162 (1999) (unpublished), Chap., p. 427.
6. Y. Nakata, K. Mukai, M. Sugawara, K. Ohtsubo, H. Ishikawa, and N. Yokoyama, J. Cryst. Growth 208, 93 (2000).
7. T. Kita, O. Wada, H. Ebe, Y. Nakata, and M. Sugawara, Jpn. J. Appl. Phys., Part 2 41, L1143 (2002).
8. S. Fafard, M. Spanner, J. P. McCaffrey, and Z. R. Wasilewski, Appl. Phys. Lett. 76, 2268 (2000).
9. J. Tatebayashi, M. Nishioka, and Y. Arakawa, Appl. Phys. Lett. 78, 3469 (2001).
10. J. Tatebayashi, M. Nishioka, and Y. Arakawa, J. Cryst. Growth 237-239, 1296 (2002).
11. X. Q. Zhang, S. Ganapathy, H. Kumano, K. Uesugi, and I. Suemune, J. Appl. Phys. 92, 6813 (2002).
12. S. Ganapathy, X. Q. Zhang, K. Uesugi, H. Kumano, I. Suemune, B. J. Kim, and T. Y. Seong, Proceedings of the 14th International Conference on InP and Related Materials (2002) (unpublished), p. 557-560.
13. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
14. M. Kondow, K. Uomi, K. Hosomi, and T. Mozume, Jpn. J. Appl. Phys., Part 2 33, L1056 (1994).
15. T. Yang, S. Nakajima, and S. Sakai, Jpn. J. Appl. Phys., Part 2 36, L320 (1997).
16. H. Naoi, Y. Naoi, and S. Sakai, Solid-State Electron. 41, 319 (1997).
17. M. Sopanen, H. X. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 994 (2000).
18. T. Kita, Y. Masuda, T. Mori, and O. Wada, Appl. Phys. Lett. 83, 4152 (2003).
19. G. Sasikala, P. Thilakan, H. Kumano, K. Uesugi, I. Suemune, and Y. Nabetani, Thin Solid Films (in press).
20. Y. P. Varshni, Physica (Utrecht) 34, 149 (1967).
21. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa, and T. Nakamura, Appl. Phys. Lett. 76, 1285 (2000).