Effect of in0.2Ga0.8As and in0.2Al 0.8As combination layer on band offsets of InAs quantum dots

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5237-5239

  He, J ^a,b   Xu, B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC EXCITATION; ELECTRON DIFFRACTION; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SUBSTRATES;

CRYSTAL SURFACES; ENERGY SEPARATION; LUMINESCENCE SPECTRA; TEMPERATURE SENSITIVITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142693995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763975     Document Type: Article

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