The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Sun, Y ^a   Cheng, S F ^a   Chen, G ^a   Hicks, R F ^a   Cederberg, J G ^b   Biefeld, R M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYERS; CRITICAL THICKNESS; INDIUM ARSENIDE; NANOSCALE CONTROL;

ANTIMONY; DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; QUENCHING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20444478643     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1858054     Document Type: Article

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