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Microelectronic Engineering

Volumn 81, Issue 2-4, 2005, Pages 229-237

Long-wavelength lasers based on metamorphic quantum dots

(5) Zhukov, A E a Kovsh, A R b Ustinov, V M a Ledentsov, N N b Alferov, Zh I a

a IOFFE INSTITUTE (Russian Federation)

b NL Nanosemiconductor GmbH (Germany)

Author keywords

1.3 1.55 m wavelength; Diode laser; Epitaxy; Metamorphic structures; Quantum dots

Indexed keywords

COMPOSITION; CRYSTALLINE MATERIALS; CURRENT DENSITY; EPITAXIAL GROWTH; LASERS; LIGHT EMISSION; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; TEMPERATURE MEASUREMENT;

1.3-1.55ΜM WAVELENGTH; CRYSTALLINE SUBSTRATES; LASING WAVELENGTH; METAMORPHIC STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 23444434962 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.03.012 Document Type: Conference Paper

Times cited : (9)

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