InAsN/GaAs(N) quantum-dot and InGaNAs/GaAs quantum-well emitters: A comparison

Applied Physics Letters

Volumn 86, Issue 23, 2005, Pages 1-3

  Bais, G ^a   Cristofoli, A ^a   Jabeen, F ^a   Piccin, M ^a   Carlino, E ^a   Rubini, S ^a   Martelli, F ^a   Franciosi, A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MONOLAYERS; OPTICAL COMMUNICATION; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; PHOTOEMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SILICA; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM-DOT EMITTERS; RADIO FREQUENCY (RF); ROOM TEMPERATURE; STRUCTURAL CHARACTERIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 21244465530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1944899     Document Type: Article

References (18)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996).
3. N. Hatori, K. Otsubo, M. Ishida, T. Akiyama, Y. Nakata, H. Ebe, S. Okumura, T. Yamamoto, M. Sugawara, and Y. Arakawa, Proceedings of the 30th European Conference on Optical Communications, Stockholm, 5-9 September 2004, paper Th. 4.3.4.
4. H. Riechert, A. Ramakrishnan, and G. Steinle, Semicond. Sci. Technol. 17, 892 (2002).
5. M. Sopanen, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 994 (2000).
6. Z. Z. Sun, S. F. Yoon, K. C. Yew, B. X. Bo, D. A. Yan, and T. Chih-Hang, Appl. Phys. Lett. 85, 1469 (2004).
7. J. Miguel-Sánchez, A. Guzmán, and E. Muñoz, Appl. Phys. Lett. 85, 1940 (2004).
8. E Carlino, C Giannini, L Tapfer, M Catalano, E. Tourní, Y. H. Zhang, and K. H. Ploog, J. Appl. Phys. 78, 2403 (1995).
9. See, e.g., J.-M. Chauveau, A. Trampert, K. H. Ploog, and E. Tourní, Appl. Phys. Lett. 84, 2503 (2004) and references therein.
10. Optimum growth conditions for InAsN and InAs QDs were found to be different. InAs QDs grown on GaAs at the same temperature of InAsN QDs (500 °C) showed a luminescence peaked at 1.166 eV sat 10 Kd with a FWHM of 86 meV. InAs dots grown at 540 °C showed a more intense PL peaked at 1.121 eV with a FWHM of 43 meV sat 10 Kd. The FWHM reduced to 38 meV at room temperature. The thermal stability of the PL signal was also increased. However, growth of InAsN dots at 540 °C resulted in no redshift of the luminescence as compared to N-free dots, an indication of poor N incorporation, and to a degradation of the optical quality of the dots.
11. E. Tourní, M.-A. Pinault, and A. Guzmán, Appl. Phys. Lett. 80, 4148 (2002).
12. S. Shirakata, M. Kondow, and T. Kitatani, Appl. Phys. Lett. 80 2087 (2002).
13. Y. D. Jang, J. S. Yim, U. H. Lee, D. Lee, J. W. Jang, K. H. Park, W. G. Jeong, J. H. Lee, and D. K. Oh, Physica E (Amsterdam) 17, 127 (2003).
14. O. Schumann, L. Geelhaar, H. Riechert, H. Cerva, and G. Abstreiter, J. Appl. Phys. 96, 2832 (2004).
15. D. I. Lubyshev, P. P. González-Borrero, E. Marega, Jr., E. Petitprez, N. La Scala, Jr., and P. Basmaji, Appl. Phys. Lett. 68, 205 (1995).
16. U. Bockelmann and G. Bastard, Phys. Rev. B 42, 8947 (1990).
17. A. Markus, A. Fiore, J. D. Ganìre, U. Oesterle, J. X. Chen, B. Deveaud, M. Ilegems, and H. Riechert, Appl. Phys. Lett. 80, 911 (2002).
18. T. Akiyama, M. Ekawa, M. Sugawara, H. Kuwatsuka, H. Sudo, K. Kawaguchi, A. Kuramata, H. Ebe, and Y. Arakawa, Proceedings of the 30th European Conference on Optical Communications, Stockholm, 5-9 September 2004, paper Mo. 3.4.1.