InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Kudo, Makoto ^a   Nakaoka, Toshihiro ^b,d   Iwamoto, Satoshi ^c,d   Arakawa, Yasuhiko ^b,d  

^a HITACHI LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaAs; InAsSb; Molecular beam epitaxy; Quantum dots

Indexed keywords

IRRADIATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ARSENIC FLUX; GAAS; INASSB; PHOTOLUMINESCENCE SPECTRUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17444369068     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L45     Document Type: Article

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