Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1496-1501

  Stintz, A ^a   Liu, G T ^a   Gray, A L ^a   Spillers, R ^a   Delgado, S M ^a   Malloy, K J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CLADDING (COATING); LASER APPLICATIONS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM); LASER CLADDING PROCESS; SOLID-SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034188028     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591412     Document Type: Article

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