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Volumn 227-228, Issue , 2001, Pages 1151-1154
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Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980 nm
a
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Author keywords
A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Superlattices; B1. Arsenides; B2. Semiconducting gallium aresenide; B3. Laser diodes
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Indexed keywords
CURRENT DENSITY;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR SUPERLATTICES;
THRESHOLD CURRENT DENSITY;
VERTICAL CAVITY;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035398826
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01005-3 Document Type: Conference Paper |
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Times cited : (14)
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References (11)
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