InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2815-2817

  Ustinov, V M ^a   Maleev, N A ^a   Zhukov, A E ^a   Kovsh, A R ^a   Egorov, A Yu ^a   Lunev, A V ^a   Volovik, B V ^a   Krestnikov, I L ^a   Musikhin, Yu G ^a   Bert, N A ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Ledentsov, N N ^a,b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032620409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124023     Document Type: Article

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