Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5697-5699

  Gong, Q ^a   Offermans, P ^a   Notzel R ^a   Koenraad, P M ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; QUENCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION; THICKNESS CONTROL; ULTRAHIGH VACUUM;

ATOM DIFFUSION; CAPPING PROCESS; ELECTROCHEMICAL ETCHING; ELEVATED TEMPERATURES;

INDIUM COMPOUNDS;

EID: 12844275998     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1831564     Document Type: Article

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