Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates

Semiconductors

Volumn 37, Issue 12, 2003, Pages 1411-1413

  Zhukov, A E ^a   Vasil'yev, A P ^a   Kovsh, A R ^a   Mikhrin, S S ^a   Semenova, E S ^a   Egorov, A Yu ^a   Odnoblyudov, V A ^a   Maleev, N A ^a   Nikitina, E V ^a   Kryjanovskaya, N V ^a   Gladyshev, A G ^a   Shernyakov, Yu M ^a   Maximov, M V ^a   Ledentsov, N N ^a   Ustinov, V M ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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Indexed keywords

EID: 0346938390     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1634663     Document Type: Article

References (9)

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6. A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1143 (2003) [Semiconductors 37, 1119 (2003)].
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8. M. Fischer, D. Gollub, S. Moses, et al., in Abstract Book of International Workshop on GaAs Based Lasers for 1.3-1.5 μm Wavelength Range (Wroclaw, Poland, 2003), p. 48.
9. L. H. Li, V. Sallet, G. Patriarche, et al., in Abstract Book of International Workshop on GaAs Based Lasers for 1.3-1.5 μm Wavelength Range (Wroclaw, Poland, 2003), p. 49.