SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 771-776

InAs/GaAs self-assembled quantum dots grown by ALMBE and MBE

(5) Bosacchi, A a Frigeri, P a Franchi, S a Allegri, P a Avanzini, V a

a CNR (Italy)

Author keywords

ALMBE; MBE; Quantum dots

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031142753 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01031-7 Document Type: Article

Times cited : (78)

References (13)

1
- 51249167289
- J.Y. Marzin, J.M. Gérard, O. Cabrol, B. Jusserand and B. Sermage, Nuovo Cimento D 17 (1995) 1285; J.M. Gérard, in: Confined Electron and Photon New Physics and Applications, Eds. C. Weisbuch and E. Burstein, NATO ASI Series (Plenum, New York, 1994).
- (1995) Nuovo Cimento D , vol.17 , pp. 1285
- Marzin, J.Y.¹ Gérard, J.M.² Cabrol, O.³ Jusserand, B.⁴ Sermage, B.⁵

2
- 51249167289
- Eds. C. Weisbuch and E. Burstein, NATO ASI Series Plenum, New York
- J.Y. Marzin, J.M. Gérard, O. Cabrol, B. Jusserand and B. Sermage, Nuovo Cimento D 17 (1995) 1285; J.M. Gérard, in: Confined Electron and Photon New Physics and Applications, Eds. C. Weisbuch and E. Burstein, NATO ASI Series (Plenum, New York, 1994).
- (1994) Confined Electron and Photon New Physics and Applications
- Gérard, J.M.¹

3
- 0030530640
- D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Y. Egorov, A.E. Zhukov, P.S. Kopev, Z.I. Alferov, S.S. Ruvimov, U. Gosele and J. Heydenreich, Phys. Status Solidi (b) 194 (1996) 159.
- (1996) Phys. Status Solidi (B) , vol.194 , pp. 159
- Bimberg, D.¹ Ledentsov, N.N.² Grundmann, M.³ Kirstaedter, N.⁴ Schmidt, O.G.⁵ Mao, M.H.⁶ Ustinov, V.M.⁷ Egorov, A.Y.⁸ Zhukov, A.E.⁹ Kopev, P.S.¹⁰ Alferov, Z.I.¹¹ Ruvimov, S.S.¹² Gosele, U.¹³ Heydenreich, J.¹⁴

4
- 0030563250
- A. Madhukar, J. Crystal Growth 163 (1996) 149.
- (1996) J. Crystal Growth , vol.163 , pp. 149
- Madhukar, A.¹

5
- 24544447747
- A. Tackeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Inata and N. Yokoyama, Jpn. J. Appl. Phys. (1995) L405.
- (1995) Jpn. J. Appl. Phys.
- Tackeuchi, A.¹ Nakata, Y.² Muto, S.³ Sugiyama, Y.⁴ Inata, T.⁵ Yokoyama, N.⁶

6
- 0030105142
- A. Sasaki, J. Crystal Growth 160 (1995) 27.
- (1995) J. Crystal Growth , vol.160 , pp. 27
- Sasaki, A.¹

7
- 30244546204
- G.E. Tsyrlin, A.O. Golubok, S.Y. Tipisev and N.N. Ledentsov, Semiconductors 29 (1995).
- (1995) Semiconductors , vol.29
- Tsyrlin, G.E.¹ Golubok, A.O.² Tipisev, S.Y.³ Ledentsov, N.N.⁴

8
- 0000235722
- N.N. Ledentsov, P.D. Wang, C.M.S. Torres, A.Y. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov and P.S. Kopev, Phys. Rev. B 50 (1994) 12171.
- (1994) Phys. Rev. B , vol.50 , pp. 12171
- Ledentsov, N.N.¹ Wang, P.D.² Torres, C.M.S.³ Egorov, A.Y.⁴ Maximov, M.V.⁵ Ustinov, V.M.⁶ Zhukov, A.E.⁷ Kopev, P.S.⁸

9
- 0001101497
- K. Mukai, N. Ohtsuka, H. Shoji and M. Sugawara, Appl. Phys. Lett. 68 (1996) 3013.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3013
- Mukai, K.¹ Ohtsuka, N.² Shoji, H.³ Sugawara, M.⁴

10
- 0027612353
- For a review, see: Y. Horikoshi, Semicond. Sci. Tecknol. 8 (1993) 1032.
- (1993) Semicond. Sci. Tecknol. , vol.8 , pp. 1032
- Horikoshi, Y.¹

11
- 0029306737
- and references therein
- See, for example: A. Bosacchi, F. Colonna, S. Franchi, P. Pascarella, P. Allegri and V. Avanzini, J. Crystal Growth 150 (1995) 185, and references therein.
- (1995) J. Crystal Growth , vol.150 , pp. 185
- Bosacchi, A.¹ Colonna, F.² Franchi, S.³ Pascarella, P.⁴ Allegri, P.⁵ Avanzini, V.⁶

12
- 0000349946
- X.W. Lin, J. Washburn, Z. Liliental-Weber, E.R. Weber, A. Sasaki, A. Wakahara and Y. Nabetani, Appl. Phys. Lett. 65 (1994) 1677.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1677
- Lin, X.W.¹ Washburn, J.² Liliental-Weber, Z.³ Weber, E.R.⁴ Sasaki, A.⁵ Wakahara, A.⁶ Nabetani, Y.⁷

13
- 0001317758
- N.P. Kobayashi, T.R. Ramachandran, P. Chen and A. Madhukar, Appl. Phys. Lett. 68 (1996) 3299.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3299
- Kobayashi, N.P.¹ Ramachandran, T.R.² Chen, P.³ Madhukar, A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.