Formation of ultrathin Si Nx Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high- k dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1481-1490

  Akazawa, Masamichi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE RECONSTRUCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER FILMS; EX SITU DEPOSITION; INTERFACE CONTROL LAYER; INTERFACE FORMATION;

SILICON COMPOUNDS;

EID: 34547609948     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2750344     Document Type: Article

References (44)

1. R. Chau, Conference Digest of IEEE Device Research Conference, University Park, PA, 26-28 June 2006 (unpublished), p. 3.
2. R. Chau, IEEE Trans. Nanotechnol. 4, 153 (2005).
3. M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 68, 1099 (1996).
4. R. Droopad, K. Rajagolalan, J. Abrokwah, L. Adams, N. England, D. Uebelhoer, and M. Passlak, Workbook of MBE2006 Conference, Tokyo, Japan, 3-8 September 2006 (unpublished), p. 250.
5. T. Bryllert, L. E. Wenersson, L. E. Froberg, and L. Samuelson, IEEE Electron Device Lett. 27, 323 (2006).
6. H. Hasegawa, Appl. Surf. Sci. 212-213, 311 (2003).
7. R. Jia, H. Hasegawa, N. Shiozaki, and S. Kasai, J. Vac. Sci. Technol. B 24, 2060 (2006).
8. J. M. Moisson, K. Elcess, F. Houzay, J. Y. Marzin, J. M. Gerard, F. Barthe, and M. Bensousan, Phys. Rev. B 41, 12945 (1990).
9. N. Shiozaki, T. Sato, and H. Hasegawa, J. Vac. Sci. Technol. B 23, 1714 (2005).
10. H. Hasegawa, M. Akazawa, K. Matsuzaki, H. Ishii, and H. Ohno, Jpn. J. Appl. Phys., Part 1 27, 2265 (1988).
11. H. Hasegawa, M. Akazawa, H. Ishii, and K. Matsuzaki, J. Vac. Sci. Technol. B 7, 870 (1989).
12. S. Tiwari, S. L. Wright, and J. Batey, IEEE Electron Device Lett. 9, 488 (1988).
13. G. G. Fountain, S. V. Hattangady, D. J. Vitkavage, R. A. Rudder, and R. J. Markunas, Electron. Lett. 24, 1134 (1988).
14. H. Hasegawa, Thin Solid Films 367, 58 (2000).
15. D. S. Mui, S. F. Fang, and H. Morko̧, Appl. Phys. Lett. 59, 1887 (1991).
16. Z. Wang, M. E. Lin, D. Biswas, B. Mazhari, N. Teraguchi, Z. Fan, X. Gui, and H. Morko̧, Appl. Phys. Lett. 62, 3291 (1993).
17. D.-G. Park, J. C. Reed, and H. Morko̧, Appl. Phys. Lett. 71, 1210 (1997).
18. H.-S. Kim, I. Ok, M. Zhang, T. Lee, F. Zhu, L. Yu, and J. C. Lee, Appl. Phys. Lett. 89, 222903 (2006).
19. I. Ok, IEEE Electron Device Lett. 27, 145 (2006).
20. J. Noborisaka, J. Motohisa, and T. Fukui, Appl. Phys. Lett. 86, 213102 (2005).
21. H. Hasegawa, presented at the 14th International Conference on Molecular Beam Epitaxy, 3-8 September 2006, Tokyo, Japan [J. Cryst. Growth (to be published)].
22. H. Hasegawa, S. Kasai, T. Sato, and T. Hashizume, Int. J. High Speed Electron. Syst. 16, 421 (2006).
23. International Technology Roadmmap for Semiconductors (TRS), 2005 ed., Emerging Research Devices, http://www.itrs.net/Links/2005ITRS/ERD2005.pdf
24. D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz, Phys. Rev. Lett. 65, 452 (1990).
25. D. A. Woolf, D. I. Westwood, and R. H. Williams, Appl. Phys. Lett. 62, 1370 (1993).
26. E. A. Kraut, Phys. Rev. B 28, 1965 (1983).
27. M. Mutoh, N. Tsurumi, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 38, 2538 (1999).
28. S. A. Chambers and V. A. Loebs, Phys. Rev. B 47, 9513 (1993).
29. S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, K. Wada, and M. Oshima, Phys. Rev. B 53, 13534 (1996).
30. N. Negoro, S. Anantathanasarn, and H. Hasegawa, J. Vac. Sci. Technol. B 21, 1945 (2003).
31. Y. Nakano, N. Negoro, and H. Hasegawa, Jpn. J. Appl. Phys., Part 1 41, 2542 (2002).
32. R. D. Bringans, M. A. Olmstead, R. I. G. Uhrberg, and R. Z. Bachrach, Phys. Rev. B 36, 9569 (1987).
33. B. Voigtlander, A. Zinner, T. Weber, and H. P. Bonzel, Phys. Rev. B 51, 7583 (1995).
34. P. Cova, S. Poulin, O. Grenier, and R. A. Masut, J. Appl. Phys. 97, 073518 (2005).
35. J. L. Freeouf, J. A. Silberman, S. L. Wright, S. Tiwari, and J. Batey, J. Vac. Sci. Technol. B 7, 854 (1989).
36. S. Anantathanasarn and H. Hasegawa, Appl. Surf. Sci. 216, 275 (2003).
37. H. Hasegawa and T. Sawada, Thin Solid Films 103, 119 (1983).
38. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
39. A. Jaouad, V. Aimez, C. Aktik, K. Bellatreche, and A. Souifi, J. Vac. Sci. Technol. A 22, 1027 (2004).
40. M. Passlack, J. Vac. Sci. Technol. B 23, 1773 (2005).
41. H. Hasegawa and H. Oho, J. Vac. Sci. Technol. B 4, 1130 (1986).
42. H. Hasegawa, L. He, H. Ohno, T. Sawada, T. Haga, Y. Abe, and H. Takahashi, J. Vac. Sci. Technol. B 5, 1097 (1987).
43. T. Sawada and H. Hasegawa, Phys. Status Solidi A 54, 689 (1979).
44. D. S. Mui, J. Reed, B. Biswas, and H. Morko̧, J. Appl. Phys. 72, 553 (1992).