Device interference in GaAs quantum wire transistors and its suppression by surface passivation using Si interface control layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2060-2068

  Jia, Rui ^a   Hasegawa, Hideki ^a   Shiozaki, Naoko ^a   Kasai, Seiya ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; TRANSISTORS;

DEVICE INTERFERENCE; ELECTROSTATIC SIDE GATING; NANODEVICES; SILICON INTERFACE CONTROL LAYER; SURFACE PASSIVATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33746502588     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2216720     Document Type: Article

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