Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 92-96

  Hasegawa, Hideki ^a   Sato, Taketomo ^a   Kasai, Seiya ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROCHEMISTRY; FERMI LEVEL; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMIONIC EMISSION;

ELECTROCHEMICAL DEPOSITION; FERMI LEVEL PINNING; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0034300369     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00386-X     Document Type: Article

References (9)

1. Hasegawa H., Sato T., Kaneshiro C. presented at PCSI-26 (San Diego, Jan 17-21, 1999). J. Vac. Sci. Technol., B. 17:1999;1856.
2. Wu N.J., Hashizume T., Hasegawa H., Amemiya Y. Jpn. J. Appl. Phys. 34:1994;936.
3. Sato T., Kaneshiro C., Hasegawa H. Jpn. J. Appl. Phys. 38:1999;2448.
4. Tung R.T. Phys. Rev. B. 45:1992;13509.
5. Mönch W. Appl. Surf. Sci. 92:1996;367.
6. Hasegawa H., Ohno H. J. Vac. Sci. Technol., B. 4:1986;1130.
7. Hasegawa H., Sato T., Hashizume T. J. Vac. Sci. Technol., B. 15:1997;1227.
8. Kaneshiro C., Sato T., Hasegawa H. Inst. Phys. Conf. Ser. 1999;585. No. 162-11.
9. Kampen T.U., Schmitsdorf R.F., Mönch W. Appl. Phys. A. 60(4):1995;391.