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Volumn 93, Issue 13, 2004, Pages

Chemical tuning of metal-semiconductor interfaces

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SEMICONDUCTOR QUANTUM WELLS; SURFACE CHEMISTRY; SYNCHROTRON RADIATION; THIN FILMS; TRANSPORT PROPERTIES; TUNING;

EID: 17544379221     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.136801     Document Type: Article
Times cited : (33)

References (32)
  • 13
    • 7644236631 scopus 로고
    • Electronic Materials: A New Era of Materials Science (Spring-Verlag, Berlin), Chap. 8
    • J. H. Weaver, in Electronic Materials: A New Era of Materials Science, Springer Ser. Solid-State Sci. Vol. 95 (Spring-Verlag, Berlin, 1991), Chap. 8, p. 135-214.
    • (1991) Springer Ser. Solid-state Sci. , vol.95 , pp. 135-214
    • Weaver, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.