Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states

Applied Physics Letters

Volumn 72, Issue 15, 1998, Pages 1899-1901

  Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONTACTS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; VAN DER WAALS FORCES;

CHALCOGENIDES; INTERFACE INDUCED GAP STATES; LAYERED SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0032050851     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121220     Document Type: Article

References (32)

1. A. Koma, K. Sunouchi, and T. Miyajima, J. Vac. Sci. Technol. B 3, 724 (1985).
2. A. Koma, K. Ueno, and K. Saiki, J. Cryst. Growth 111, 1029 (1991).
3. K. Ueno, A. Abe, K. Saiki, and A. Koma, Jpn. J. Appl. Phys., Part 2 30, L1352 (1991).
4. V. Heine, Phys. Rev. 138, A1689 (1965).
5. W. Schottky, Phys. Z. 113, 367 (1940).
6. N. F. Mott, Proc. Cambridge Philos. Soc. 34, 568 (1938).
7. R. L. Anderson, Solid-State Electron. 5, 341 (1962).
8. For more details, the reader is referred to the monograph by W. Mönch, Semiconductor Surfaces and Interfaces, 2nd ed. (Springer, Berlin, 1995).
9. L. N. Pauling, The Nature of the Chemical Bond (Cornell University Press, Ithaca, NY, 1939/1960).
10. W. Mönch, in Festkörperprobleme (Advances in Solid State Physics), edited by P. Grosse (Vieweg, Braunschweig, 1986), Vol. 26, p. 67.
11. W. Mönch, Appl. Surf. Sci. 92, 367 (1996).
12. E. Bucher, in Photoelectrochemistry and Photovoltaics of Layered Semiconductors, edited by A. Aruchamy (Kluwer Academic, Dordrecht, 1992), p. 1.
13. S. Kurtin and C. A. Mead, J. Phys. Chem. Solids 30, 2007 (1969).
14. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
15. W. Mönch, J. Appl. Phys. 80, 5076 (1996).
16. O. Lang, A. Klein, C. Pettenkofer, and W. Jaegermann, J. Appl. Phys. 80, 3817 (1996).
17. R. Mamy, X. Zaoui, J. Barrau, and A. Chevy, Rev. Phys. Appl. 25, 947 (1990).
18. A. J. Nelson, D. W. Niles, C. R. Schwerdtfeger, S.-H. Wei, and A. Zunger, J. Electron Spectrosc. Relat. Phenom. 68, 185 (1994).
19. T. Löher, Dissertation, Freie Universität Berlin, 1995.
20. C. A. Mead, Phys. Lett. 18, 218 (1965).
21. B. A. Morgan, K. M. Ring, K. L. Kavanagh, A. A. Talin, R. S. Williams, T. Yasuda, T. Yasui, and Y. Segawa, J. Appl. Phys. 79, 1532 (1996).
22. C. A. Mead and W. G. Spitzer, Phys. Rev. 114, A713 (1964).
23. M. L. Bortz, F. S. Ohushi, and B. A. Parkinson, Surf. Sci. 223, 285 (1989).
24. A. Klein, C. Pettenkofer, W. Jaegermann, M. Lux-Steiner, and E. Bucher, Surf. Sci. 321, 19 (1994).
25. A. J. Nelson, A. M. Gabor, M. A. Contreras, J. R. Tuttle, R. Noufi, P. E. Sobol, P. Asoka-Kumar, and K. G. Lynn, J. Appl. Phys. 78, 269 (1995).
26. M. A. Contreras and R. Noufi, J. Cryst. Growth 174, 283 (1997).
27. D. R. Penn, Phys. Rev. 128, 2093 (1962).
28. A. Baldereschi, Phys. Rev. B 7, 5212 (1973).
29. D. W. Niles and H. Höchst, Phys. Rev. B 41, 12710 (1990).
30. K. Nishi, H. Ohyama, T. Suzuki, T. Mitsuyu, and T. Tomimasu, Appl. Phys. Lett. 70, 3585 (1997).
31. R. Schlaf, O. Lang, C. Pettenkofer, and W. Jaegermann, J. Vac. Sci. Technol. A 15, 1365 (1997).
32. J. R. Lince, D. J. Carré, and P. D. Fleischauer, Phys. Rev. B 36, 1647 (1987).